Publication:

Strained Si on relaxed SiGe made by ion implantation and strain transfer

Date

2004-10
Proceedings Paper
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dc.contributor.authorMantl, S.
dc.contributor.authorBuca, D.
dc.contributor.authorHolländer, B.
dc.contributor.authorMörschbächer, M.
dc.contributor.authorTrinkhaus, H.
dc.contributor.authorLuysberg, M.
dc.contributor.authorHueging, N.
dc.contributor.authorHouben, L.
dc.contributor.authorCarius, R.
dc.contributor.authorLoo, Roger
dc.contributor.authorCaymax, Matty
dc.contributor.authorSchäfer, H.
dc.contributor.imecauthorLoo, Roger
dc.contributor.imecauthorCaymax, Matty
dc.contributor.orcidimecLoo, Roger::0000-0003-3513-6058
dc.date.accessioned2021-10-15T14:42:55Z
dc.date.available2021-10-15T14:42:55Z
dc.date.issued2004-10
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/9262
dc.source.beginpage731
dc.source.conferenceSiGE: Materials, Processing, and Devices
dc.source.conferencedate3/10/2004
dc.source.conferencelocationHonolulu, HI USA
dc.source.endpage740
dc.title

Strained Si on relaxed SiGe made by ion implantation and strain transfer

dc.typeProceedings paper
dspace.entity.typePublication
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