Browsing by Author "Ma, X."
Now showing 1 - 4 of 4
- Results Per Page
- Sort Options
Publication An investigation of field reduction effect on NBTI parameter characterization and lifetime prediction using a constant field stress method
;Zhou, L. ;Bo, T. ;Ji, Z. ;Yang, H. ;Xu, H. ;Liu, Q.; ;Wang, X. ;Ma, X. ;Li, Y. ;Yin, H.Du, A.Journal article2020, IEEE Transactions on Device and Materials Reliability, (20) 1, p.92-96Publication Insights into the effect of TiN thickness scaling on DC and AC NBTI characteristics in replacement metal gate pMOSFETs
;Zhou, L. ;Liu, Q. ;Yang, H. ;Ji, Z. ;Xu, H. ;Tang, B.; ;Jiang, H. ;Luo, Y. ;Wang, X. ;Ma, X.Li, Y.Journal article2020, IEEE Transactions on Device and Materials Reliability, (20) 3, p.498-505Publication Perimeter Driven Transport in the p-GaN Gate as a Limiting Factor for Gate Reliability
Proceedings paper2019-04, IEEE International Reliability Physics Symposium (IRPS), 31/03/2019, p.4D4.1-4D4.10Publication Understanding frequency dependence of trap generation under AC negative bias temperature instability stress in Si p-FinFETs
;Zhou, L. ;Zhang, Q. ;Yang, H. ;Ji, Z. ;Zhang, Z. ;Liu, Q. ;Xu, H. ;Tang, B.; ;Ma, X.Wang, X.Journal article2020, IEEE Electron Device Letters, (41) 7, p.965-968