Browsing by Author "Maji, D."

Now showing 1 - 4 of 4

1/f Noise in drain and gate current of MOSFETs with high-k gate stacks

Magnone, P.
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Crupi, F.
;
Giusi, G.
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Pace, C.
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Simoen, Eddy
;
Claeys, Cor
;
Pantisano, Luigi
;
Maji, D.
Journal article
2009, IEEE Transactions on Device and Materials Reliability, (9) 2, p.180-189
Characterization of interface and oxide traps in Ge pMOSFETs based on DCIV technique

Maji, D.
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Crupi, F.
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Magnone, P.
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Giusi, G.
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Pace, C.
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Simoen, Eddy
;
Rao, V.Ramgopal
Proceedings paper
2009, 2nd International Workshop on Electron Devices and Semiconductor Technology - IEDST, 1/06/2009
On the dc and noise properties of the gate current in epitaxial Ge p-channel metal oxide semiconductor field effect transistors with TiN/TaN/HfO2/SiO2 gate stack

Maji, D.
;
Crupi, F.
;
Giusi, G.
;
Pace, C.
;
Simoen, Eddy
;
Claeys, Cor
;
Rao, V.R.
Journal article
2008, Applied Physics Letters, (92) 16, p.163508
Understanding and optimization of hot-carrier reliability in germanium-on-silicon pMOSFETs

Maji, D.
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Crupi, Felice
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Amat, E.
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Simoen, Eddy
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De Jaeger, Brice
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Brunco, David
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Manoj, C.R.
Journal article
2009, IEEE Transactions on Electron Devices, (56) 5, p.1063-1069