Browsing by Author "Makkonen, Ilja"
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Publication A demonstration of donor passivation through direct formation of V-Asx complexes in GexSn1-x
Journal article2020-05, Journal of Applied Physics, (127) 19, p.195703Publication Compensating defects in epitaxial Ge and GexSn1-x
Meeting abstract2019, E-MRS Fall Meeting Warsaw 2019, 16/09/2019Publication Evolution of phosphorus-vacancy clusters in germanium
Meeting abstract2018, eMRS 2018 Fall Meeting, Symposium U: Monolithic and Heterogeneous Integration of Advanced Materials & Devices on Silicon, 17/09/2018, p.U.10.5Publication Evolution of phosphorus-vacancy clusters in germanium
Journal article2019-01, Journal of Applied Physics, (125) 2, p.25701Publication Heavily phosphorus doped germanium: strong relationship of phosphorus with vacancies and impact of Sn alloying on doping activation
Journal article2019, Journal of Applied Physics, (125) 22, p.225703Publication Source/drain materials for Ge nMOS devices: phosphorus activation in epitaxial Si, Ge, Ge1xSnx and SiyGe1xySnx
Journal article2020-05, ECS Journal of Solid State Science and Technology, (9) 4, p.44010