Browsing by Author "Matsubayashi, Daisuke"

Accurate off-current evaluation by parasitic capacitance extraction in capacitor-less DRAM cells

Band Tail State Broadening in IGZO TFTs After pBTI-Induced Negative V_T Shift Revealed via DC and 1/f Noise Measurements

First Systematic Characterization of Floating Body Effects in GAA Nanosheet 3D DRAM Access Transistors

First-principles screening for sustainable OTS materials

Improving IGZO transistor PBTI reliability with hydrogen anneal achieving overdrive voltage of 1.2V for a lifetime of 5 years at 95°C

In silico screening for As/Se-free ovonic threshold switching materials

In-Poor IGZO: Superior Resilience to Hydrogen in Forming Gas Anneal and PBTI

OTS Physics-based Screening for Environment-friendly Selector Materials

Pathways for Retention Boost in Atomic Layer Etched IGZO-Based Capacitorless DRAM

The Impact of Process Steps on Nearly Ideal Subthreshold Slope in 300-mm Compatible InGaZnO TFTs

Understanding the Cycling-Dependent Threshold Voltage Instability in OTS Devices

Unraveling BTI in IGZO devices: impact of device architecture, channel film deposition method and stoichiometry/phase, and device operating conditions