Browsing by Author "Matsubayashi, Daisuke"
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Publication First-principles screening for sustainable OTS materials
Journal article2024, SOLID-STATE ELECTRONICS, (214) April, p.Art. 108876Publication In silico screening for As/Se-free ovonic threshold switching materials
Journal article2023, NPJ COMPUTATIONAL MATERIALS, (9) 1, p.Art. 96Publication In-Poor IGZO: Superior Resilience to Hydrogen in Forming Gas Anneal and PBTI
Journal article2025, ACS APPLIED ELECTRONIC MATERIALS, (7) 9, p.4210-4219Publication OTS Physics-based Screening for Environment-friendly Selector Materials
Proceedings paper2022, International Electron Devices Meeting (IEDM), DEC 03-07, 2022Publication Pathways for Retention Boost in Atomic Layer Etched IGZO-Based Capacitorless DRAM
Journal article2025, IEEE ELECTRON DEVICE LETTERS, (46) 7, p.1111-1114Publication The Impact of Process Steps on Nearly Ideal Subthreshold Slope in 300-mm Compatible InGaZnO TFTs
Journal article2025, IEEE ELECTRON DEVICE LETTERS, (46) 5, p.761-764Publication Understanding the Cycling-Dependent Threshold Voltage Instability in OTS Devices
Proceedings paper2022, International Electron Devices Meeting (IEDM), DEC 03-07, 2022