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Browsing by Author "Matsuda, S."

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    Damage coefficient in high-temperature particle- and gamma-irradiated silicon p-i-n diodes

    Ohyama, H.
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    Takakura, K.
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    Hayama, K.
    ;
    Kuboyama, S.
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    Deguchi, Y.
    ;
    Matsuda, S.
    ;
    Simoen, Eddy  
    Journal article
    2003, Applied Physics Letters, (82) 2, p.296-298
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    Degradation of the electrical performance and floating body efffects in ultra thin gate oxide FD-SOI nMOSFETs by 2-MeV electron irradiation

    Hayama, K.
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    Rafi, J.M.
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    Takakura, K.
    ;
    Ohyama, H.
    ;
    Mercha, Abdelkarim  
    ;
    Simoen, Eddy  
    ;
    Claeys, Cor
    Proceedings paper
    2004, Proceedings 5th European Workshop on Radiation Effects on Components and Systems (RADECS), 22/09/2004, p.43-48
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    Radiation damage of Si photodiodes by high-temperature irradiation

    Ohyama, H.
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    Takakura, K.
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    Shigaki, K.
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    Kuboyama, S.
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    Matsuda, S.
    ;
    Simoen, Eddy  
    ;
    Claeys, Cor
    Journal article
    2003, Microelectronic Engineering, (66) 1_4, p.536-541
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    Radiation source dependence of performance degradation in thin gate oxide fully-depleted SOI n-MOSFETs

    Hayama, K.
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    Takakura, T.
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    Ohyama, H.
    ;
    Kuboyama, S.
    ;
    Matsuda, S.
    ;
    Rafi, J.M.
    ;
    Mercha, Abdelkarim  
    Journal article
    2005, Microelectronics Reliability, (45) 9_11, p.1376-1381
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    Radiation source dependence on floating-body effect in thin gate oxide fully-depleted SOI N-MOSFETs

    Hayama, K.
    ;
    Ohyama, H.
    ;
    Takakura, K.
    ;
    Kuboyama, S.
    ;
    Jono, T.
    ;
    Oka, K.
    ;
    Matsuda, S.
    ;
    Simoen, Eddy  
    Proceedings paper
    2004, Proceedings International Workshop on Radiation Effects in Semiconductor Devices for Space Applications, p.249-252
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    Radiaton damage of SiC Schotttky diodes by electron irradiation

    Ohyama, H.
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    Takakura, K.
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    Watanabe, T.
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    Nishiyama, K.
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    Shigaki, K.
    ;
    Kudou, T.
    ;
    Nakabayashi, M.
    Journal article
    2005, Journal of Materials Science: Materials in Electronics, (6) 7, p.455-458

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