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Browsing by Author "Medina, Henry"

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    Dual gate synthetic MoS2 MOSFETs with 4.56 mu F/cm(2) channel capacitance, 320 mu S/mu m Gm and 420 mu A/mu m Id at 1V Vd/100nm Lg

    Wu, Xiangyu  
    ;
    Cott, Daire  
    ;
    Lin, Zaoyang  
    ;
    Shi, Yuanyuan  
    ;
    Groven, Benjamin  
    ;
    Morin, Pierre  
    Proceedings paper
    2021, IEEE International Electron Devices Meeting (IEDM), DEC 11-16, 2021
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    Superior electrostatic control in uniform monolayer MoS2 scaled transistors via in-situ surface smoothening

    Shi, Yuanyuan  
    ;
    Groven, Benjamin  
    ;
    Smets, Quentin  
    ;
    Sutar, Surajit  
    ;
    Banerjee, Sreetama  
    Proceedings paper
    2021, IEEE International Electron Devices Meeting (IEDM), DEC 11-16, 2021

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