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Dual gate synthetic MoS2 MOSFETs with 4.56 mu F/cm(2) channel capacitance, 320 mu S/mu m Gm and 420 mu A/mu m Id at 1V Vd/100nm Lg
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Dual gate synthetic MoS2 MOSFETs with 4.56 mu F/cm(2) channel capacitance, 320 mu S/mu m Gm and 420 mu A/mu m Id at 1V Vd/100nm Lg
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Date
2021
Proceedings Paper
https://doi.org/10.1109/IEDM19574.2021.9720695
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APA
Chicago
Harvard
IEEE
Basic data
APA
Chicago
Harvard
IEEE
Author(s)
Wu, Xiangyu
;
Cott, Daire
;
Lin, Zaoyang
;
Shi, Yuanyuan
;
Groven, Benjamin
;
Morin, Pierre
;
Verreck, Devin
;
Smets, Quentin
;
Medina, Henry
;
Sutar, Surajit
;
Asselberghs, Inge
;
Radu, Iuliana
;
Lin, Dennis
Journal
na
Abstract
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1622
since deposited on 2022-07-09
Acq. date: 2025-12-12
Citations
Metrics
Views
1622
since deposited on 2022-07-09
Acq. date: 2025-12-12
Citations