Publication:

Dual gate synthetic MoS2 MOSFETs with 4.56 mu F/cm(2) channel capacitance, 320 mu S/mu m Gm and 420 mu A/mu m Id at 1V Vd/100nm Lg

Date

2021
Proceedings Paper
https://doi.org/10.1109/IEDM19574.2021.9720695
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dc.contributor.authorWu, Xiangyu
dc.contributor.authorCott, Daire
dc.contributor.authorLin, Zaoyang
dc.contributor.authorShi, Yuanyuan
dc.contributor.authorGroven, Benjamin
dc.contributor.authorMorin, Pierre
dc.contributor.authorVerreck, Devin
dc.contributor.authorSmets, Quentin
dc.contributor.authorMedina, Henry
dc.contributor.authorSutar, Surajit
dc.contributor.authorAsselberghs, Inge
dc.contributor.authorRadu, Iuliana
dc.contributor.authorLin, Dennis
dc.contributor.imecauthorWu, Xiangyu
dc.contributor.imecauthorCott, Daire
dc.contributor.imecauthorLin, Zaoyang
dc.contributor.imecauthorShi, Yuanyuan
dc.contributor.imecauthorGroven, Benjamin
dc.contributor.imecauthorMorin, Pierre
dc.contributor.imecauthorVerreck, Devin
dc.contributor.imecauthorSmets, Quentin
dc.contributor.imecauthorMedina, Henry
dc.contributor.imecauthorSutar, Surajit
dc.contributor.imecauthorAsselberghs, Inge
dc.contributor.imecauthorRadu, Iuliana
dc.contributor.imecauthorLin, Dennis
dc.contributor.orcidimecShi, Yuanyuan::0000-0002-4836-6752
dc.contributor.orcidimecGroven, Benjamin::0000-0002-5781-7594
dc.contributor.orcidimecMorin, Pierre::0000-0002-4637-496X
dc.contributor.orcidimecVerreck, Devin::0000-0002-3833-5880
dc.contributor.orcidimecSmets, Quentin::0000-0002-2356-5915
dc.contributor.orcidimecSutar, Surajit::0000-0003-3114-718X
dc.contributor.orcidimecRadu, Iuliana::0000-0002-7230-7218
dc.date.accessioned2022-09-27T08:26:29Z
dc.date.available2022-07-09T02:27:22Z
dc.date.available2022-09-27T08:26:29Z
dc.date.issued2021
dc.identifier.doi10.1109/IEDM19574.2021.9720695
dc.identifier.eisbn978-1-6654-2572-8
dc.identifier.issn2380-9248
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/40076
dc.publisherIEEE
dc.source.conferenceIEEE International Electron Devices Meeting (IEDM)
dc.source.conferencedateDEC 11-16, 2021
dc.source.conferencelocationSan Francisco
dc.source.journalna
dc.source.numberofpages4
dc.title

Dual gate synthetic MoS2 MOSFETs with 4.56 mu F/cm(2) channel capacitance, 320 mu S/mu m Gm and 420 mu A/mu m Id at 1V Vd/100nm Lg

dc.typeProceedings paper
dspace.entity.typePublication
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