Browsing by Author "Middleton, P. G."
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Publication Energy-dispersive x-ray imaging of an InGaN/GaN bilayer on sapphire
;O'Donnell, K. P. ;Middleton, P. G. ;Trager-Cowan, C. ;Young, C. ;Bayliss, S. C.Fletcher, I.Journal article1998, Applied Physics Letters, (73) 22, p.3273-3275Publication Exciton localization and the Stokes' shift in InGaN epilayers
;Martin, R. W. ;Middleton, P. G. ;O'Donnell, K. P.Van der Stricht, WimJournal article1999, Appl. Phys. Lett., (74) 2, p.263-265Publication Hexagonal growth hillocks in GaN epilayers
;Middleton, P. G. ;Trager-Cowan, C. ;Mohammed, A. ;O'Donnell, K. P.Van der Stricht, WimProceedings paper1997, III-V Nitrides, 2/12/1996, p.471-476Publication Hexagonal growth hillocks of MOCVD-grown GaN on (0001) sapphire
;Mohammed, A. ;Trager-Cowan, C. ;Middleton, P. G. ;O'Donnell, K. P.Van der Stricht, WimProceedings paper1997, Microscopy of Semiconducting Materials 1997, 7/04/1997, p.235-8Publication Optical linewidths of InGaN light emitting diodes and epilayers
Journal article1997, Applied Physics Letters, (70) 14, p.1843-1845Publication Probing nitride thin films in 3-dimensions using a variable energy electron beam
;Trager-Cowan, C. ;Treguer, J. F. ;Grimson, S. T. F. ;Osborne, I. ;Barisonzi, M.Middleton, P. G.Oral presentation1999, 1st UK Nitrides Consortium ConferencePublication Probing nitride thin films in 3-dimensions using a variable energy electron beam
;Trager-Cowan, C. ;Middleton, P. G. ;Mohammed, A. ;Manson-Smith, S. K. ;Osborne, I.Barisonzi, M.Oral presentation1999, MRS Fall Meeting; November 1999; Boston, USA.Publication Probing nitride thin films in 3-dimensions using a variable energy electron beam
;Trager-Cowan, C. ;McColl, D. ;Sweeney, F. ;Grimson, S. T. F. ;Treguer, J. F.Mohammed, A.Journal article2000, MRS Internet Journal of Nitride Semiconductor Research, 5, Suppl. 1, p.W5.10Publication Probing nitride thin films in 3-dimensions using a variable energy electron beam
;Trager-Cowan, C. ;Treguer, J. F. ;Grimson, S. T. F. ;Osborne, I. ;Barisonzi, M.Middleton, P. G.Proceedings paper1999, Electron Microscopy and Analysis 1999; Sheffield, UK. August 1999., p.91-94Publication Probing the indium mole fraction in an InGaN epilayer by depth resolved catholuminescence
;Trager-Cowan, C. ;Middleton, P. G. ;Mohammed, A. ;O'Donnell, K. P. O.Van der Stricht, WimProceedings paper1998, Nitride Semiconductors, 1/12/1997, p.715-718Publication Spectroscopy and microscopy of localised and delocalised excitons in InGaN-based light emitting diodes and epilayers
;O'Donnell, K. P. ;Martin, R. W. ;Middleton, P. G. ;Bayliss, S. C. ;Fletcher, I.Van der Stricht, WimJournal article1999, Materials Science and Engineering. B, (B59) 1_3, p.288-291Publication The dependence of the optical energies on InGaN Composition
;O'Donnell, K. P. ;Martin, R. W. ;Trager-Cowan, C. ;White, M. E. ;Esona, K.Deatcher, C.Journal article2001, Materials Science and Engineering B, (82) 1_3, p.194-196Publication The effect of a GaN nucleation layer on GaN film properties grown by metalorganic chemical vapor deposition
Proceedings paper1996, Gallium Nitride and Related Materials; 27 November - 1 December 1995; Boston, MA, USA., p.231-236Publication The optical and structural properties of InGaN epilayers with very high indium content
Journal article1999, Materials Science and Engineering. B, (B59) 1_3, p.292-297Publication The optical linewidth of InGaN light emitting diodes
Journal article1997, Materials Science and Engineering B, B50, p.285-88