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Browsing by Author "Mohammadzadeh, A."

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    60 MeV proton irradiation effects on NO-annealed and standard-oxide deep submicron MOSFETs

    Simoen, Eddy  
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    Hermans, Jan  
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    Vereecken, Wim
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    Vermoere, Carl
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    Claeys, C.
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    Augendre, Emmanuel
    Oral presentation
    2001, RADECS; 10-14 September 2001; Grenoble, France.
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    Comparison of the total dose and 60MeV proton-irradiation response of CMOS transistors operated at 4.2K

    Simoen, Eddy  
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    Claeys, C.
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    Mohammadzadeh, A.
    Oral presentation
    1999, RADECS '99; 13-17 September 1999; Abbaye de Fontevraud, France.
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    Comparison of the total dose and 60MeV proton-irradiation response of CMOS transistors operated at 4.2K

    Simoen, Eddy  
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    Claeys, Cor
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    Mohammadzadeh, A.
    Proceedings paper
    2000, 1999 5th European Conference on Radiation and its Effects on Components and Systems - RADECS, 13/09/1999, p.535-541
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    Degradation of deep submicron partially depleted SOI CMOS transistors under MeV proton irradiation

    Simoen, Eddy  
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    Rafi, Joan Marc
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    Mercha, Abdelkarim  
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    De Meyer, Kristin  
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    Claeys, Cor
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    Kokkoris, M.
    Proceedings paper
    2003, Proceedings of the 18th Symposium on Microelectronics Technology and Devices - SBMICRO, 8/09/2003, p.18-27
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    Displacement damage effects after high energy proton irradiation in cryogenic MOSFETs for space applications

    Simoen, Eddy  
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    Claeys, Cor
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    Mohammadzadeh, A.
    Proceedings paper
    2000, Proceedings of the RADECS Workshop - Les Actes des Journees Techniques du RADECS, 11/09/2000, p.47-53
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    Evidence for short-channel effect in the radiation response of 0.18μm CMOS transistors

    Simoen, Eddy  
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    Hermans, Jan  
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    Augendre, Emmanuel
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    Marescaux, Théodore
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    Claeys, Cor
    ;
    Badenes, Gonçal
    Proceedings paper
    2000, Proceedings of the RADECS Workshop - Les Actes des Journees Techniques du RADECS, 11/09/2000, p.259-31
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    Guidelines for cryogenic spaceborn CMOS testing and optimization

    Claeys, Cor
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    Simoen, Eddy  
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    Mohammadzadeh, A.
    Proceedings paper
    2000, 4th European Workshop on Low Temperature Electronics - WOLTE-4, 21/06/2000, p.13-20
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    High-energy boron-implantation and proton-irradiation effects in diodes with shallow trench isolation

    Poyai, Amporn
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    Simoen, Eddy  
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    Claeys, Cor
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    Hayama, Kiyoteru
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    Kobayashi, K.
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    Ohyama, Hidenori
    Proceedings paper
    2000, Proceedings 2nd ENDEASD Workshop, 27/06/2000, p.193-203
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    Impact of 60 MeV proton irradiations on the 4.2K characteristics of 0.7 µm cryo CMOS transistors

    Claeys, Cor
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    Simoen, Eddy  
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    Mohammadzadeh, A.
    Meeting abstract
    1999, Electrochemical Society Fall Meeting: 5th Symposium on Low Temperature Electronics, 17/10/1999, p.1192
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    Impact of irradiations performed at liquid helium temperatures on the operation of 0.7 μm CMOS devices and read-out circuits

    Simoen, Eddy  
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    Mercha, Abdelkarim  
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    Creten, Ybe
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    Merken, Patrick
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    De Moor, Piet  
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    Putzeys, Jan  
    Oral presentation
    2003, 7th European Conference on Radiation and Its Effects on Components and Systems - RADECS
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    Proton radiation hardness of MOS transistors at cryogenic temperature

    Simoen, Eddy  
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    Claeys, Cor
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    Mohammadzadeh, A.
    Meeting abstract
    1999, BNV- SBP. General Scientific Meeting. Program Overview, Plenary Invited Lectures, Oral and Poster communications, 20/05/1999, p.CM25
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    Radiation performance of deep submicron CMOS technologies for space applications

    Claeys, Cor
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    Simoen, Eddy  
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    Ohyama, Hidenori
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    Mohammadzadeh, A.
    Proceedings paper
    2000, Proceedings of the 4th International Workshop on Radiation Effects on Semiconductor Devices for Space Applications, 11/10/2000, p.113-119
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    Radiation performance of shallow trench isolation

    Claeys, Cor
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    Simoen, Eddy  
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    Poyai, Amporn
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    Hayama, Kiyoteru
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    Kobayashi, K.
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    Ohyama, Hidenori
    Proceedings paper
    2000, Proceedings of the 4th International Workshop on Radiation Effects on Semiconductor Devices for Space Applications, 11/10/2000, p.19-24
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    Radiation source dependence of degradation in shallow trench isolation diodes

    Hayama, Kiyoteru
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    Ohyama, Hidenori
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    Kobayasi, K.
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    Poyai, Amporn
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    Simoen, Eddy  
    ;
    Claeys, Cor
    Proceedings paper
    2000, Proceedings of the RADECS Workshop - Les Actes des Journees Techniques du RADECS, 11/09/2000, p.32-35
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    Radiation-induced back channel leakage in MeV-proton-irradiated 0.10 mm-CMOS partially depleted SOI MOSFETs

    Rafi, Joan Marc
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    Mercha, Abdelkarim  
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    Simoen, Eddy  
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    Claeys, Cor
    ;
    Mohammadzadeh, A.
    Oral presentation
    2003, 7th European Conference on Radiation and Its Effects on Components and Systems - RADECS
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    Radiation-induced back-channel leakage in 60 MeV proton irradiation 0.10 μm CMOS partially depleted SOI MOSFETs

    Rafi, Joan Marc
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    Mercha, Abdelkarim  
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    Simoen, Eddy  
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    Claeys, Cor
    ;
    Mohammadzadeh, A.
    Proceedings paper
    2004, Proceedings 7th European Conference on Radiation and its Effects on Components and Systems, 15/09/2003, p.425-432
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    Semi-empirical modelling of the multiplication current in n-MOSFETs operating at liquid-helium temperature

    Simoen, Eddy  
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    Claeys, Cor
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    Mohammadzadeh, A.
    Meeting abstract
    2000, Belgische Natuurkundige Vereniging / Société Belge de Physique: General Scientific Meeting, 25/05/2000, p.CM40
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    Short-channel radiation effect in 60 MeV proton irradiated 0.13 μm CMOS transistors

    Simoen, Eddy  
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    Mercha, Abdelkarim  
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    Morata, Alex
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    Hayama, Kiyoteru
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    Richardson, Geoffrey
    Oral presentation
    2002, RADECS Workshop
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    Short-channel radiation effect in 60 MeV proton irradiated 0.13 μm CMOS transistors

    Simoen, Eddy  
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    Mercha, Abdelkarim  
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    Morata, Alex
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    Hayama, K.
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    Richardson, Geoffrey
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    Rafi, Joan Marc
    Journal article
    2003, IEEE Trans. Nuclear Science, (50) 6, p.2426-2432
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    Substrate current and kink analysis of MOSFETs at liquid helium temperatures

    Simoen, Eddy  
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    Claeys, Cor
    ;
    Mohammadzadeh, A.
    Proceedings paper
    2000, 4th European Workshop on Low Temperature Electronics - WOLTE-4, 21/06/2000, p.265-270

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