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60 MeV proton irradiation effects on NO-annealed and standard-oxide deep submicron MOSFETs
Publication:
60 MeV proton irradiation effects on NO-annealed and standard-oxide deep submicron MOSFETs
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Date
2001
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APA
Chicago
Harvard
IEEE
Basic data
APA
Chicago
Harvard
IEEE
Author(s)
Simoen, Eddy
;
Hermans, Jan
;
Vereecken, Wim
;
Vermoere, Carl
;
Claeys, C.
;
Augendre, Emmanuel
;
Badenes, Gonçal
;
Mohammadzadeh, A.
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2079
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Acq. date: 2026-01-10
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Views
2079
since deposited on 2021-10-14
2
last month
1
last week
Acq. date: 2026-01-10
Citations