Browsing by Author "Mukhopadhyay, Subhadeep"
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Publication Fundamental study of the apparent voltage-dependence of NBTI kinetics by constant electric field stress in Si and SiGe devices
Proceedings paper2016, IEEE International Reliability Physics Symposium - IRPS, 16/04/2016, p.5A.3Publication NBTI in replacement metal gate SiGe core finFETs: impact of Ge concentration, fin width, fin rotation and interface passivation by high pressure anneal
Proceedings paper2016, IEEE International Reliability Physics Symposium - IRPS, 17/04/2016, p.4B.2Publication Statistical model of the NBTI-induced threshold voltage, subthreshold swing, and transconductance degradations in advanced p-FinFETs
Proceedings paper2016, IEEE International Electron Devices Meeting - IEDM, 3/12/2016, p.388-401