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Browsing by Author "Mukhopadhyay, Subhadeep"

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    Fundamental study of the apparent voltage-dependence of NBTI kinetics by constant electric field stress in Si and SiGe devices

    Mukhopadhyay, Subhadeep
    ;
    Franco, Jacopo  
    ;
    Vaisman Chasin, Adrian  
    ;
    Roussel, Philippe  
    Proceedings paper
    2016, IEEE International Reliability Physics Symposium - IRPS, 16/04/2016, p.5A.3
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    NBTI in replacement metal gate SiGe core finFETs: impact of Ge concentration, fin width, fin rotation and interface passivation by high pressure anneal

    Franco, Jacopo  
    ;
    Kaczer, Ben  
    ;
    Vaisman Chasin, Adrian  
    ;
    Mertens, Hans  
    ;
    Ragnarsson, Lars-Ake  
    Proceedings paper
    2016, IEEE International Reliability Physics Symposium - IRPS, 17/04/2016, p.4B.2
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    Statistical model of the NBTI-induced threshold voltage, subthreshold swing, and transconductance degradations in advanced p-FinFETs

    Franco, Jacopo  
    ;
    Kaczer, Ben  
    ;
    Mukhopadhyay, Subhadeep
    ;
    Duhan, Pardeep
    ;
    Weckx, Pieter  
    Proceedings paper
    2016, IEEE International Electron Devices Meeting - IEDM, 3/12/2016, p.388-401

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