Browsing by Author "Neimash, V. B."
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Publication Deep levels in high-energy proton-irradiated tin-doped n-type Czochralskii silicon
; Publication Identification of Sn-V related acceptor levels in irradiated tin-doped n-type silicon
; Publication Influence of tin impurities on the generation and annealing of thermal oxygen donors in Czochralski silicon at 450 degrees C
; Svensson, B.Journal article2000, Journal of the Electrochemical Society, (147) 7, p.2727-2733Publication Radiation defects and carrier lifetime in tin-doped n-type silicon
Proceedings paper2002, GADEST - Proceedings of the 9th International Autumn Meeting Gettering and Defect Engineering in Semiconductor Technology, 30/09/2001, p.425-430Publication The nature of precursors for the thermal donor formation in silicon
Publication Thermal oxygen donors with an anomalous small electron capture cross section
Proceedings paper1998, Proceedings of the 5th International Symposium on High Purity Silicon V, 2/11/1998, p.200-211Publication Tin doping effects in silicon
; Publication Tin doping of silicon for controlling oxygen precipitation and radiation hardness
; Publication Tin-related deep levels in proton-irradiated n-type silicon
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