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Browsing by Author "Nelhiebel, M."

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    A two-stage model for negative bias temperature instability

    Grasser, Tibor
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    Kaczer, Ben  
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    Goes, Wolfgang
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    Aichinger, Thomas
    ;
    Hehenberger, Philipp
    Proceedings paper
    2009-04, 47th Annual IEEE International Reliability Physics Symposium, 26/04/2009, p.33-44
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    Analytic modeling of the bias temperature instability using capture/emission time maps

    Grasser, Tibor
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    Wagner, Paul-Jurgen
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    Reisinger, Hans
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    Aichinger, T.
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    Pobegen, G.
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    Nelhiebel, M.
    Proceedings paper
    2011-12, IEEE International Electron Devices Meeting - IEDM, 4/12/2011, p.618-621
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    Defect creation stimulated by thermally activated hole trapping as the driving force behind negative bias temperature instability in SiO2, SiON, and high-k gate stacks

    Grasser, T.
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    Kaczer, Ben  
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    Aichinger, T.
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    Goes, W.
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    Nelhiebel, M.
    Proceedings paper
    2008, IEEE Integrated Reliability Workshop - IRW, 12/10/2008, p.91-95
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    Do NBTI-induced interface states show fast recovery? A study using a corrected on-the-fly charge-pumping measurement technique

    Hehenberger, Philipp
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    Aichinger, Thomas
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    Grasser, Tibor
    ;
    Goes, Wolfgang
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    Triebl, O.
    ;
    Kaczer, Ben  
    Proceedings paper
    2009-04, 47th Annual IEEE International Reliability Physics Symposium, 26/04/2009, p.1033-1038
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    On the 'permanent' component of NBTI

    Grasser, Tibor
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    Aichinger, Thomas
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    Reisinger, Hans
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    Franco, Jacopo  
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    Wagner, Paul-Jürgen
    Proceedings paper
    2010, IEEE International Integrated Reliability Workshop - IIRW, 17/10/2010, p.2-7
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    The "permanent" component of NBTI: composition and annealing

    Grasser, Tibor
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    Aichinger, Thomas
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    Pobegen, Gregor
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    Reisinger, Hans
    ;
    Wagner, Paul-Jurgen
    Proceedings paper
    2011-04, IEEE International Reliability Physics Symposium - IRPS, 10/04/2011, p.605-613
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    Understanding negative bias temperature instability in the context of hole trapping

    Grasser, T.
    ;
    Kaczer, Ben  
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    Goes, W.
    ;
    Aichinger, T.
    ;
    Hehenberger, P.
    ;
    Nelhiebel, M.
    Journal article
    2009, Microelectronic Engineering, (86) 7_9, p.1876-1882

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