Browsing by Author "Nelhiebel, M."
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Publication A two-stage model for negative bias temperature instability
Proceedings paper2009-04, 47th Annual IEEE International Reliability Physics Symposium, 26/04/2009, p.33-44Publication Analytic modeling of the bias temperature instability using capture/emission time maps
;Grasser, Tibor ;Wagner, Paul-Jurgen ;Reisinger, Hans ;Aichinger, T. ;Pobegen, G.Nelhiebel, M.Proceedings paper2011-12, IEEE International Electron Devices Meeting - IEDM, 4/12/2011, p.618-621Publication Defect creation stimulated by thermally activated hole trapping as the driving force behind negative bias temperature instability in SiO2, SiON, and high-k gate stacks
Proceedings paper2008, IEEE Integrated Reliability Workshop - IRW, 12/10/2008, p.91-95Publication Do NBTI-induced interface states show fast recovery? A study using a corrected on-the-fly charge-pumping measurement technique
Proceedings paper2009-04, 47th Annual IEEE International Reliability Physics Symposium, 26/04/2009, p.1033-1038Publication On the 'permanent' component of NBTI
Proceedings paper2010, IEEE International Integrated Reliability Workshop - IIRW, 17/10/2010, p.2-7Publication The "permanent" component of NBTI: composition and annealing
;Grasser, Tibor ;Aichinger, Thomas ;Pobegen, Gregor ;Reisinger, HansWagner, Paul-JurgenProceedings paper2011-04, IEEE International Reliability Physics Symposium - IRPS, 10/04/2011, p.605-613Publication Understanding negative bias temperature instability in the context of hole trapping
Journal article2009, Microelectronic Engineering, (86) 7_9, p.1876-1882