Browsing by Author "Noakes, T.C.Q."

Now showing 1 - 4 of 4

Characterization of low energy (2-5keV) implantation into Si

Collart, E.J.
;
Kirkwood, D.
;
Vandenberg, J.A.
;
Werner, M.
;
Vandervorst, Wilfried
;
Brijs, Bert
Oral presentation
2002, Ion Implantation Conference
Damage accumulation and dopant migration during shallow As and Sb implantation into Si

Werner, M.
;
van den Berg, J.A.
;
Armour, D.G.
;
Vandervorst, Wilfried
;
Collart, E.H.J.
Journal article
2004, Nuclear Instruments & Methods in Physics Research B, 216, p.67-74
High depth resolution characterization of the damage and annealing behaviour of ultrashallow As-implants in Si

van den Berg, J.A.
;
Armour, D.G.
;
Werner, M.
;
Whelan, S.
;
Vandervorst, Wilfried
;
Clarysse, Trudo
Proceedings paper
2002, Proceedings 14th International Conference on Ion Implantation Technology Conference, 22/09/2002, p.597-600
High resolution, quantitative depth profiling analysis of nm thin hgh-k dielectriclayers using medium energy ion scattering (MEIS)

van den Berg, J.A.
;
Reading, M.A.
;
Armour, D.G>
;
Bailey, P.
;
Noakes, T.C.Q.
;
Conard, Thierry
Proceedings paper
2009, 19th Ion Beam Analysis Conference - IBA, 7/09/2009