Browsing by Author "Ohyama, H."
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Publication A model for the radiation degradation of polycrystalline silicon films
Oral presentation2002, RADECS WorkshopPublication A study on radiation damage of IGBTs 2-MeV electrons at different temperatures
Proceedings paper2004, Proceedings 7th European Conference on Radiation and its Effects on Components and Systems, 15/09/2003, p.433-437Publication A study on radiation damage of IGBTs by 2-MeV electrons at different irradiation temperatures
Journal article2004, Nuclear Instruments & Methods in Physics Research B, 219-220, p.676-679Publication A study on radiation damage of IGBTs by 2-MeV electrons at different irradiation temperatures
Oral presentation2003, 7th European Conference on Radiation and Its Effects on Components and Systems - RADECSPublication Anomalous threshold voltage change by 2 MeV electron irradiation at 100°C in deep submicron metal-oxide-semiconductor field-effect transistors
Journal article2004-04, Applied Physics Letters, 84, p.3088-3090Publication Body potential analysis of ultra thin gate oxide FD-SOI MOSFETs in accumulation mode operation
Journal article2005, Journal of Materials Science: Materials in Electronics, (16) 7, p.459-462Publication Carrier lifetime analysis in thin gate oxide FD-SOI n-MOSFETs by gate-induced drain current tranients
Journal article2008, Journal of Materials Science: Materials in Electronics, (19) 2, p.161-165Publication Carrier lifetime evaluation of electron irradiated SiGe/Si diode
;Idemoto, T. ;Ohyama, H. ;Takakura, K. ;Tsunoda, I. ;Yoneoka, M.Nakashima, T.Proceedings paper2010, 2nd Semiconductor Materials and Devices Forum - SMDF-2, 11/12/2010, p.154-155Publication Carrier lifetime studies in diode structures on Si substrates with and without Ge doping
;Uleckas, A. ;Gaubas, E. ;Rafi, J.M. ;Chen, J. ;Yang, D. ;Ohyama, H.; Vanhellemont, J.Journal article2011, Solid State Phenomena, 178-179, p.347-352Publication Comparison of electron irradiation effect on thermal donors in Cz and oxygen doped FZ silicon
;Takakura, K. ;Ohyama, H. ;Yoshida, T. ;Murakawa, H. ;Rafi, Joan Marc ;Job, R.Ulyashin, A.Journal article2003, Physica B, 340-342, p.1022-1025Publication Comparison of electron irradiation effects on diodes fabricated on silicon and on germanium doped silicon substrates
Journal article2009, Physica B: Condensed Matter, (404) 23_24, p.4671-4673Publication Damage coefficient in high-temperature particle- and gamma-irradiated silicon p-i-n diodes
Journal article2003, Applied Physics Letters, (82) 2, p.296-298Publication Degradation and their recovery behavior of irradiated GaAlAs LEDs
Proceedings paper2008, Gettering and Defect Engineering in Semiconductor Technology XII, 14/10/2007, p.119-124Publication Degradation behavior for high-temperature irradiated npn Si transistors
Proceedings paper2002, Proceedings 5th International Workshop on Radiation Effects in Semiconductor Devices for Space Applications, 9/10/2002, p.89-92Publication Degradation behaviors for high temperature irradiated NPN Si transistors
Proceedings paper2002, Proceedings of the 5th International Workshop on Radiation Effects on Semiconductor Devices for Space Applications, 9/10/2002, p.89-92Publication Degradation of drain current hysteresis in electron-irradiated FD-SOI MOSFETs in accumulation mode operation
Proceedings paper2005, Proceedings of the International Conference on Electrical Engineering - ICEE, 10/07/2005Publication Degradation of electrical performance and floating body effect in ultra thin gate oxide FD-SOI n-MOSFETs by 7.5-MeV proton irradiation
Journal article2004, Microelectronics Reliability, (44) 9_11, p.1721-1726Publication Degradation of high resistivity silicon float zone and magnetic Czochralski n-type silicon detectors subjected to 2-MeV electron irradiation
;Rafi, J.M. ;Boulord, C. ;Hayama, K. ;Ohyama, H. ;Campabadal, F. ;Pellegrini, G.Lozano, M.Oral presentation2008, 8th International Conference on Position Sensitive DetectorsPublication Degradation of high-resistivity float zone and magnetic Czochralski n-type silicon detectors subjected to 2-MeV electron irradiation
;Rafi, J.M. ;Boulord, C. ;Hayama, K. ;Ohyama, H. ;Campabadal, F. ;Pellegrini, G.Lozano, M.Journal article2009, Nuclear Instruments and Methods in Physics Research A, 604, p.258-261Publication Degradation of SiC-MESFETs by irradiation
;Ohyama, H. ;Takakura, K. ;Uemura, K. ;Shigaki, K. ;Kudou, T. ;Matsumoto, T. ;Arai, M.Kuboyama, S.Journal article2008, Journal of Materials Science: Materials in Electronics, (19) 2, p.175-178