Browsing by Author "Pangon, Nadège"
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Publication A new physically-based model for temperature acceleration of time-to-breakdown
Oral presentation1998, 29th IEEE Semiconductor Interface Specialists Conference - SISC; 3-5 Dec. 1998; San Diego, CA, USA.Publication Investigation of properties of SiO2 defects created during electric stressing at different temperatures
Oral presentation1999, Semiconductor Interface Specialists' Conference; December 1999; Charleston, SC, USA.Publication Investigation of temperature acceleration of thin oxide time-to-breakdown
Journal article1999, Microelectronic Engineering, (48) 1_4, p.47-50Publication Temperature acceleration of oxide breakdown and its impact on ultra-thin gate oxide reliability
Proceedings paper1999, Symposium on VLSI Technology: Technical Digest; June 1999; Kyoto, Japan., p.59-60Publication The effect of elevated temperature on the reliability of very thin oxide films
Proceedings paper1999, ESSDERC'99 - Proceedings of the 29th European Solid-State Device Research Conference; 13-15 September 1999; Leuven, Belgium., p.356-359Publication The influence of elevated temperature on degradation and lifetime prediction of thin silicon-dioxide films
Journal article2000, IEEE Trans. Electron Devices, (47) 7, p.1514-1521