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Browsing by Author "Pangon, Nadège"

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    A new physically-based model for temperature acceleration of time-to-breakdown

    Pangon, Nadège
    ;
    Degraeve, Robin  
    ;
    Roussel, Philippe  
    ;
    Groeseneken, Guido  
    ;
    Maes, Herman
    Oral presentation
    1998, 29th IEEE Semiconductor Interface Specialists Conference - SISC; 3-5 Dec. 1998; San Diego, CA, USA.
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    Investigation of properties of SiO2 defects created during electric stressing at different temperatures

    Kaczer, Ben  
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    Degraeve, Robin  
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    Pangon, Nadège
    ;
    Groeseneken, Guido  
    Oral presentation
    1999, Semiconductor Interface Specialists' Conference; December 1999; Charleston, SC, USA.
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    Investigation of temperature acceleration of thin oxide time-to-breakdown

    Kaczer, Ben  
    ;
    Degraeve, Robin  
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    Pangon, Nadège
    ;
    Nigam, Tanya
    ;
    Groeseneken, Guido  
    Journal article
    1999, Microelectronic Engineering, (48) 1_4, p.47-50
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    Temperature acceleration of oxide breakdown and its impact on ultra-thin gate oxide reliability

    Degraeve, Robin  
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    Pangon, Nadège
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    Kaczer, Ben  
    ;
    Nigam, Tanya
    ;
    Groeseneken, Guido  
    ;
    Naem, Abdalla
    Proceedings paper
    1999, Symposium on VLSI Technology: Technical Digest; June 1999; Kyoto, Japan., p.59-60
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    The effect of elevated temperature on the reliability of very thin oxide films

    Kaczer, Ben  
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    Degraeve, Robin  
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    Pangon, Nadège
    ;
    Nigam, Tanya
    ;
    Groeseneken, Guido  
    Proceedings paper
    1999, ESSDERC'99 - Proceedings of the 29th European Solid-State Device Research Conference; 13-15 September 1999; Leuven, Belgium., p.356-359
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    The influence of elevated temperature on degradation and lifetime prediction of thin silicon-dioxide films

    Kaczer, Ben  
    ;
    Degraeve, Robin  
    ;
    Pangon, Nadège
    ;
    Groeseneken, Guido  
    Journal article
    2000, IEEE Trans. Electron Devices, (47) 7, p.1514-1521

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