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Browsing by Author "Pavelka, Tibor"

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    Contactless mobility measurements of inversion charge carriers on silicon substrates with SiO2 and HfO2 gate dielectrics

    Everaert, Jean-Luc
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    Rosseel, Erik  
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    Dekoster, Johan  
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    Pap, Aron
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    Maszaros, Albert
    Journal article
    2010, Applied Physics Letters, (96) 12, p.122906
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    Control of laser induced interface traps with in-line corona charge metrology

    Everaert, Jean-Luc
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    Rosseel, Erik  
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    Ortolland, Claude
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    Aoulaiche, Marc
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    Hoffmann, Thomas Y.
    Proceedings paper
    2008, 16th Annual IEEE International Conference on Advanced Thermal Processing of Semiconductors - RTP, 30/09/2008, p.163-168
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    Monitoring plasma nitridation of HfSiOx by corona charge measurements

    Everaert, Jean-Luc
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    Shi, Xiaoping
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    Rothschild, Aude
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    Schaekers, Marc  
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    Rosseel, Erik  
    Journal article
    2007, Microelectronic Engineering, (84) 9_10, p.2251-2254
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    Non-contact metrology for inversion charge carrier mobility by corona charge and photovoltage measurements on blank wafers with a gate dielectric

    Everaert, Jean-Luc
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    Rosseel, Erik  
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    Pap, Aron
    ;
    Meszaros, Albert
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    Dekoster, Johan  
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    Pavelka, Tibor
    Oral presentation
    2010, 16th Workshop on Dielectrics in Microelectronics- WoDIM
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    Noncontact metrology for inversion charge carrier mobility by corona charge and photovoltage measurements on blank wafers with a gate dielectric

    Everaert, Jean-Luc
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    Rosseel, Erik  
    ;
    Pap, Aron
    ;
    Meszaros, Albert
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    Dekoster, Johan  
    ;
    Pavelka, Tibor
    Journal article
    2011, Journal of Vacuum Science and Technology B, (29) 1, p.01AB05
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    Novel noncontact approach to characterization of mobility in inversion layers using corona charging of dielectric and SPV monitoring of sheet resistance

    Everaert, Jean-Luc
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    Rosseel, Erik  
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    Meszaros, Albert
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    Kis-Szabo, Krisztian
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    Tutto, P
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    Pap, Aron
    Proceedings paper
    2010, Advanced Gate Stack, Source/Drain, and Channel Engineering for Si-based CMOS 6: New Materials, Processes, and Equipment, 25/04/2010, p.33-41
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    Use of corona charge photo-conductance decay (charge-PCD) for fast metal contamination monitoring of high temperature processes

    Huyghebaert, Cedric  
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    Bearda, Twan
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    Rosseel, Erik  
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    Everaert, Jean-Luc
    ;
    Don, Eric
    ;
    Pavelka, Tibor
    Proceedings paper
    2008, IEEE/SEMI Advanced Semiconductor Manufacturing Conference - ASMC, 5/05/2008, p.397-401

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