Browsing by Author "Pey, K.L."
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Publication A comprehensive model for breakdown mechanism in HfO2 high-k gate stacks
Proceedings paper2004, Technical Digest International Electron Devices Meeting - IEDM, 13/12/2004, p.725-728Publication A new breakdown failure mechanism in HfO2 gate dielectrics
; Publication Breakdown induced thermo-chemical reactions in HfO2 high-k/poly-silicon gate stacks
Journal article2005, Applied Physics Letters, (87) 24, p.242907-1-242907-3Publication Direct visualization and in-depth physical study of metal filament formation in percolated high-k dielectrics
Publication HfO2/spacer-interface breakdown in HfO2 high-k/poly-silicon gate stacks
Publication New understanding of dielectric breakdown in advanced FinFET devices – physical, electrical, statistical and multiphysics study
; ; ; Pey, K.L.Proceedings paper2016, IEEE International Devices Meeting - IEDM, 3/12/2016, p.397-398Publication Threshold shift observed in resistive switching in metal-oxide-semiconductor transistors and the effect of forming gas anneal