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Browsing by Author "Phung, Quan"

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    Atomic layer deposition of ruthenium on ruthenium surfaces: a theoretical study

    Phung, Quan
    ;
    Pourtois, Geoffrey  
    ;
    Swerts, Johan  
    ;
    Pierloot, Christine  
    ;
    Delabie, Annelies  
    Journal article
    2015, Journal of Physical Chemistry C, (119) 12, p.6592-6603
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    Atomic layer deposition of ruthenium on titanium nitride surface: a density functional theory study

    Phung, Quan
    ;
    Vancoillie, Steven
    ;
    Pourtois, Geoffrey  
    ;
    Swerts, Johan  
    ;
    Pierloot, Christine  
    Journal article
    2013, Journal of Physical Chemistry C, (117) 37, p.19442-19453
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    Atomic layer deposition of ruthenium thin films from (ethylbenzyl) (1-ethyl-1,4-cyclohexadienyl) Ru: process characteristics, surface chemistry, and film properties

    Popovici, Mihaela Ioana  
    ;
    Groven, Benjamin  
    ;
    Marcoen, Kristof  
    ;
    Phung, Quan
    ;
    Dutta, Shibesh
    Journal article
    2017, Chemistry of Materials, (29) 11, p.4654-4666
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    Atomic layer deposition of Ruthenium: a theoretical insight

    Phung, Quan
    ;
    Pourtois, Geoffrey  
    ;
    Swerts, Johan  
    ;
    Pierloot, Kristine
    ;
    Delabie, Annelies  
    Meeting abstract
    2014, 10th Congress of the World Association of Theoretical and Computational Chemists, 5/10/2014
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    Ruthenium nanowires by selective atomic layer deposition

    Swerts, Johan  
    ;
    Wen, Liang Gong
    ;
    Delabie, Annelies  
    ;
    Phung, Quan
    ;
    Boemmels, Juergen  
    ;
    Tokei, Zsolt  
    Meeting abstract
    2013, 13th International Conference on Atomic Layer Deposition - ALD 2013, 28/07/2013
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    Ruthenocene and cyclopentadienyl pyrrolyl ruthenium as precursors for ruthenium atomic layer deposition: a comparative study of dissociation enthalpies

    Phung, Quan
    ;
    Vancoillie, Steven
    ;
    Delabie, Annelies  
    ;
    Pourtois, Geoffrey  
    ;
    Pierloot, Christine  
    Journal article
    2012, Theoretical Chemistry Accounts, 131, p.1238-1247

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