Browsing by Author "Piontek, Andreas"
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Publication A 0.25μm SiGe BiCMOS technology including integrated RF passive components optimised for low power applications
Proceedings paper2003, 33rd European Solid-State Devices Research Conference - ESSDERC, 16/09/2003Publication A novel isolation scheme featuring cavities in the collector for a high-speed 0.13μm SiGe:C BiCMOS technology
Proceedings paper2007, Silicon Monolithic Integrated Circuits in RF Systems Topical Meeting, 10/01/2007, p.158-161Publication Impact of lateral and vertical scaling on the reliability of a low-complexity 200 GHz SiGe: CHBT
Proceedings paper2005, Proceedings 4th International Conference on Silicon Epitaxy and Heterosctructures - ICSI-4, 23/05/2005, p.62-63Publication Impact of lateral and vertical scaling on the reliability of a low-complexity 200 GHz SiGe:C HBT
Proceedings paper2005-05, International Conference on Silicon Epitaxy and Heterostructures - ICSI, 23/05/2005, p.62-63Publication Impact of lateral scaling on low frequency noise of 200 GHz SiGe:C HBTs
Proceedings paper2005-11, Noise and Fluctuations: 18th International Conference on Noise and Fluctuations - ICNF, 19/09/2005, p.253-256Publication Influence of lateral device scaling and airgap deep trench isolation on reliability performance of 200GHz SiGe:C HBTs
Journal article2007, Semiconductor Science and Technology, (22) 1, p.S9-S12Publication Lateral and vertical scaling of a QSA HBT for a 0.13μm 200GHz SiGe:C BiCMOS technology
Proceedings paper2004-09, Proceedings of the 2004 IEEE Bipolar/Bicmos Circuits and Technology Meeting - BTCM, 13/09/2004, p.229-232Publication On the use of SiGe spike in the emitter to improve the fTxBVCEO product of high-speed SiGe HBTs
Journal article2007, IEEE Electron Device Letters, (28) 4, p.270-272