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Browsing by Author "Pobegen, G."

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    Analytic modeling of the bias temperature instability using capture/emission time maps

    Grasser, Tibor
    ;
    Wagner, Paul-Jurgen
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    Reisinger, Hans
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    Aichinger, T.
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    Pobegen, G.
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    Nelhiebel, M.
    Proceedings paper
    2011-12, IEEE International Electron Devices Meeting - IEDM, 4/12/2011, p.618-621
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    Characterization and physical modeling of the temporal evolution of near-interfacial states resulting from NBTI/PBTI stress in nMOS/pMOS transistors

    Grasser, T.
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    Stampfer, B.
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    Waltl, M.
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    Rzepa, G.
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    Rupp, K.
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    Schanovsky, F.
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    Pobegen, G.
    Proceedings paper
    2018, 2018 IEEE International Reliability Physics Symposium - IRPS, 13/03/2018, p.2A.2-1-2A.2-10
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    Hydrogen-related volatile defects as the possible cause for the recoverable component of NBTI

    Grasser, T.
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    Rott, K.
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    Reisinger, H.
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    Waltl, M.
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    Wagner, P.
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    Schanovsky, F.
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    Goes, W.
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    Pobegen, G.
    Proceedings paper
    2013, International Electron Devices Meeting - IEDM, 9/12/2013, p.409-412
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    Implications of gate-sided hydrogen release for post-stress degradation build-up after BTI stress

    Grasser, T.
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    Waltl, M.
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    Puschkarsky, K.
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    Stampfer, B.
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    Rzepa, G.
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    Pobegen, G.
    ;
    Reisinger, H.
    Proceedings paper
    2017, IEEE International Reliability Physics Symposium - IRPS, 2/04/2017, p.6A-2.1-6A-2.6

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