Browsing by Author "Pobegen, G."
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Publication Analytic modeling of the bias temperature instability using capture/emission time maps
;Grasser, Tibor ;Wagner, Paul-Jurgen ;Reisinger, Hans ;Aichinger, T. ;Pobegen, G.Nelhiebel, M.Proceedings paper2011-12, IEEE International Electron Devices Meeting - IEDM, 4/12/2011, p.618-621Publication Characterization and physical modeling of the temporal evolution of near-interfacial states resulting from NBTI/PBTI stress in nMOS/pMOS transistors
;Grasser, T. ;Stampfer, B. ;Waltl, M. ;Rzepa, G. ;Rupp, K. ;Schanovsky, F.Pobegen, G.Proceedings paper2018, 2018 IEEE International Reliability Physics Symposium - IRPS, 13/03/2018, p.2A.2-1-2A.2-10Publication Hydrogen-related volatile defects as the possible cause for the recoverable component of NBTI
;Grasser, T. ;Rott, K. ;Reisinger, H. ;Waltl, M. ;Wagner, P. ;Schanovsky, F. ;Goes, W.Pobegen, G.Proceedings paper2013, International Electron Devices Meeting - IEDM, 9/12/2013, p.409-412Publication Implications of gate-sided hydrogen release for post-stress degradation build-up after BTI stress
;Grasser, T. ;Waltl, M. ;Puschkarsky, K. ;Stampfer, B. ;Rzepa, G. ;Pobegen, G.Reisinger, H.Proceedings paper2017, IEEE International Reliability Physics Symposium - IRPS, 2/04/2017, p.6A-2.1-6A-2.6