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Characterization and physical modeling of the temporal evolution of near-interfacial states resulting from NBTI/PBTI stress in nMOS/pMOS transistors
Publication:
Characterization and physical modeling of the temporal evolution of near-interfacial states resulting from NBTI/PBTI stress in nMOS/pMOS transistors
Date
2018
Proceedings Paper
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Basic data
APA
Chicago
Harvard
IEEE
Basic data
APA
Chicago
Harvard
IEEE
Author(s)
Grasser, T.
;
Stampfer, B.
;
Waltl, M.
;
Rzepa, G.
;
Rupp, K.
;
Schanovsky, F.
;
Pobegen, G.
;
Puschkarsky, K.
;
Reisinger, H.
;
O'Sullivan, Barry
;
Kaczer, Ben
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1889
since deposited on 2021-10-25
Acq. date: 2025-10-24
Citations
Metrics
Views
1889
since deposited on 2021-10-25
Acq. date: 2025-10-24
Citations