Publication:

Characterization and physical modeling of the temporal evolution of near-interfacial states resulting from NBTI/PBTI stress in nMOS/pMOS transistors

Date

2018
Proceedings Paper
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dc.contributor.authorGrasser, T.
dc.contributor.authorStampfer, B.
dc.contributor.authorWaltl, M.
dc.contributor.authorRzepa, G.
dc.contributor.authorRupp, K.
dc.contributor.authorSchanovsky, F.
dc.contributor.authorPobegen, G.
dc.contributor.authorPuschkarsky, K.
dc.contributor.authorReisinger, H.
dc.contributor.authorO'Sullivan, Barry
dc.contributor.authorKaczer, Ben
dc.contributor.imecauthorO'Sullivan, Barry
dc.contributor.imecauthorKaczer, Ben
dc.contributor.orcidimecO'Sullivan, Barry::0000-0002-9036-8241
dc.contributor.orcidimecKaczer, Ben::0000-0002-1484-4007
dc.date.accessioned2021-10-25T19:13:41Z
dc.date.available2021-10-25T19:13:41Z
dc.date.embargo9999-12-31
dc.date.issued2018
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/30800
dc.identifier.urlhttps://ieeexplore.ieee.org/document/8353540
dc.source.beginpage2A.2-1
dc.source.conference2018 IEEE International Reliability Physics Symposium - IRPS
dc.source.conferencedate13/03/2018
dc.source.conferencelocationBurlingtion, CA USA
dc.source.endpage2A.2-10
dc.title

Characterization and physical modeling of the temporal evolution of near-interfacial states resulting from NBTI/PBTI stress in nMOS/pMOS transistors

dc.typeProceedings paper
dspace.entity.typePublication
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