Browsing by Author "Porti, M."
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Publication Comparison of standard macroscopic and conductive atomic force microscopy leakage measurements on gate removed high-k capacitors
Journal article2009, Journal of Vacuum Science and Technology B, (27) 1, p.356-359Publication Electrical characterization of high-dielectric-constant/SiO2 metal-oxide-semiconductor gate stacks by a conductive atomic force microscope
Journal article2005, Nanotechnology, (16) 9, p.1506-1511Publication Nanoscale electrical characterization of HfO2/SiO2/MOS gate stackx with enhanced-CAFM