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Browsing by Author "Puschkarsky, K."

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    Characterization and physical modeling of the temporal evolution of near-interfacial states resulting from NBTI/PBTI stress in nMOS/pMOS transistors

    Grasser, T.
    ;
    Stampfer, B.
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    Waltl, M.
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    Rzepa, G.
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    Rupp, K.
    ;
    Schanovsky, F.
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    Pobegen, G.
    Proceedings paper
    2018, 2018 IEEE International Reliability Physics Symposium - IRPS, 13/03/2018, p.2A.2-1-2A.2-10
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    Implications of gate-sided hydrogen release for post-stress degradation build-up after BTI stress

    Grasser, T.
    ;
    Waltl, M.
    ;
    Puschkarsky, K.
    ;
    Stampfer, B.
    ;
    Rzepa, G.
    ;
    Pobegen, G.
    ;
    Reisinger, H.
    Proceedings paper
    2017, IEEE International Reliability Physics Symposium - IRPS, 2/04/2017, p.6A-2.1-6A-2.6

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