Browsing by Author "Rafi, Joan Marc"
- Results Per Page
- Sort Options
Publication Analysis of oxygen thermal donor formation in n-type CZ silicon
Proceedings paper2003, Analytical and Diagnostic Techniques for Semiconductor Materials, Devices, and Processes, 28/04/2003, p.96-105Publication Anomalous threshold voltage change by 2 MeV electron irradiation at 100°C in deep submicron metal-oxide-semiconductor field-effect transistors
Journal article2004-04, Applied Physics Letters, 84, p.3088-3090Publication Combined electrical and spectroscopic investigation of thermal donor formation in plasma-hydrigenated n-type czochralski silicon
;Rafi, Joan Marc; ;Claeys, Cor ;Ulyashin, Aliaksandr ;Huang, Y.L. ;Job, R.Lauwaert, J.Meeting abstract2004, International Scientific Meeting Belgian Physical Society. Abstracts Book, 25/06/2004, p.74Publication Comparison between 0.13 μm partially depleted silicon-on-insulator technology with floating body operation at 300 K and 90 K
Proceedings paper2002, Proceedings of the 17th International Symposium on Microelectronics Technology and Devices - SBMICRO, 9/09/2002, p.205-212Publication Comparison of electron irradiation effect on thermal donors in Cz and oxygen doped FZ silicon
;Takakura, K. ;Ohyama, H. ;Yoshida, T. ;Murakawa, H. ;Rafi, Joan Marc ;Job, R.Ulyashin, A.Journal article2003, Physica B, 340-342, p.1022-1025Publication Deep levels in high-temperature 1 MeV electron irradiated n-type czochralski silicon
; ;Rafi, Joan Marc ;Claeys, Cor ;Neimash, V. ;Kraitchinski, A. ;Kras'ko, M.Tischenko, V.Journal article2003, Japanese Journal of Applied Physics. Part 1: Regular Papers, (42) 3, p.7184-7188Publication Degradation of deep submicron partially depleted SOI CMOS transistors under MeV proton irradiation
Proceedings paper2003, Proceedings of the 18th Symposium on Microelectronics Technology and Devices - SBMICRO, 8/09/2003, p.18-27Publication DLTS studies of high-temperature electron irradiated Cz n-Si
Journal article2004, Physica Status Solidi A, (201) 3, p.509-516Publication Effect of electron irradiation on thermal donors in oxygen-doped high-resistivity FZ Si
;Takakura, K. ;Ohyama, H. ;Yoshida, T. ;Murakawa, H. ;Rafi, Joan Marc ;Job, R.Ulyashin, A.Proceedings paper2004, Gettering and Defect Engineering in Semiconductor Technology - GADEST 2003, 21/09/2003, p.53-58Publication Effect of electron irradiation on thermal donors in oxygen-doped high-resistivity FZ Si
;Takakura, K. ;Ohyama, H. ;Yoshida, T. ;Murakawa, H. ;Rafi, Joan Marc ;Job, R.Ulyashin, A.Oral presentation2003, Gettering and Defect Engineering in Semiconductor Technology - GADESTPublication Electron irradiation effect on thermal donors in CZ-Si
;Takakura, K. ;Ohyama, H. ;Murakawa, H. ;Yoshida, T. ;Rafi, Joan Marc ;Job, R.Ulyashin, A.Journal article2004, European Physical Journal - Applied Physics, 27, p.133-135Publication Electron irradiation effects on thermal donors in Cz-Si
;Takakura, K. ;Ohyama, Hidenori ;Murakawa, H. ;Yoshida, T. ;Rafi, Joan Marc ;Job, R.Ulyashin, A.Oral presentation2003, 10th Int. Conf. on Defect Recognition, Imaging and Physics of Semiconductors - DRIP XPublication Electron irradiation induced defects in germanium-doped Czochralski silicon substrates and diodes
Journal article2011, Physica Status Solidi C, (8) 3, p.674-677Publication Evidence for a "linear kink effect" in ultra-thin gate oxide SOI MOSFETs
Proceedings paper2003, Silicon-on-Insulator Technology and Devices XI, 28/04/2003, p.319-324Publication Explaining the parameters of the electron valence-band tunneling related lorentzian noise in fully depleted SOI MOSFET's
Journal article2003, IEEE Electron Device Letters, (24) 12, p.751-754Publication Generation-lifetime and drain current transients in 0.1μm partially depleted SOI MOSFETs
Proceedings paper2003, Conferencia de Dispositivos Electronicos - CDE, 12/02/2003, p.V-12-1-V-12-4Publication High-energy proton irradiation effects on tunnelling MOS capacitors
;Fleta, C. ;Campabadal, F. ;Rafi, Joan Marc ;Lozano, M.Ulan, M.Journal article2004, Microelectronic Engineering, (72) 1_4, p.85-89Publication High-energy proton irradiation induced changes in the linear-kink noise overschoot of 0.10 μm partially depleted silicon-on-insulator metal-oxide-semiconductor field-effect transistors
Journal article2004, Journal of Applied Physics, (95) 8, p.4084-4092Publication Hydrogen-induced thermal donor formation in n-type oxygenated high-resistivity FZ silicon
Proceedings paper2002, Proceedings of the 5th Annual Workshop on Semiconductor Advances for Future Electronics - SAFE, 26/11/2002, p.91-98Publication Impact of direct plasma hydrogenation on thermal donor formation in N-type CZ silicon
Journal article2005, Journal of the Electrochemical Society, (152) 1, p.G16-G24