Browsing by Author "Raghavan, Nagarajan"
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Publication Causes and consequences of the stochastic aspect of filamentary RRAM
Journal article2015, Microelectronic Engineering, 147, p.171-175Publication Hourglass concept for RRAM: a dynamic and statistical device model
Proceedings paper2014, IEEE 21st International Symposium on Physical and Failure Analysis of Integrated Circuits - IPFA, 30/06/2014, p.245-249Publication Oxygen soluble gate electrodes for prolonged high-kappa gate-stack reliability
Publication Physical analysis of beakdown in High-k /metal gate stacks using TEM/EELS and STM for relibaility enhancement
Publication Random telegraph noise reduction in metal gate high-k stacks by bipolar switching and the performance boosting technique
Publication Standards for the Characterization of Endurance in Resistive Switching Devices
Journal article review2021, ACS NANO, (15) 11, p.17214-17231Publication Very low reset current for an RRAM device achieved in the oxygen-vacancy-controlled regime