Browsing by Author "Rantamaki, R."

Now showing 1 - 3 of 3

Epitaxial laterial overgrowth of GaN on sapphire. An examination of epitaxy quality using synchrotron X-ray topography

McNally, P. J.
;
Tuomi, T.
;
Lowney, D.
;
Jacobs, Koen
;
Danilewsky, A. N.
;
Rantamaki, R.
;
O'Hare, M.
Journal article
2001, Physica Status Solidi. A, (185) 2, p.373-382
Monitoring of stress reduction in shallow trench isolation CMOS structures via synchrotron x-ray topography, electrical data and Raman spectroscopy

McNally, P. J.
;
Curley, J. W.
;
Bolt, M.
;
Reader, A.
;
Tuomi, T.
;
Rantamaki, R.
;
Danilewsky, A. N.
Journal article
1999, J. Materials Science: Materials in Electronics, (10) 5_6, p.351-358
Synchrotron x-ray topography studies of epitaxial laterial overgrowth of GaN on sapphire

McNally, P. J.
;
O'Hare, M.
;
Tuomi, T.
;
Rantamaki, R.
;
Jacobs, Koen
;
Considine, L.
;
Danilewsky, A. N.
Proceedings paper
1999, Wide-Bandgap Semiconductors for High-Power, High-Frequency and High- Temperature Applications, 5/04/1999, p.327-332