Browsing by Author "Rasras, Mahmoud"
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Publication A reliability study of titanium silicide lines using micro-Raman spectroscopy and electron microscopy
Proceedings paper1997, Proceedings of 8th European Symposium on Reliability of Electron Devices, Failure Physics and Analysis - ESREF 97; October 1997., p.1591-1594Publication A reliability study of titanium silicide lines using micro-raman spectroscopy and electron microscopy
Journal article1997, Microelectronics and Reliability, (37) 10_11, p.1591-1594Publication A simple, cost effective and very sensitive alternative for photon emission spectroscopy
;Rasras, Mahmoud; ; ;Maes, Herman ;Vanhaeverbeke, S.De Pauw, P.Proceedings paper1997, Proceedings 23rd International Symposium for Testing and Failure Analysis - ISTFA, 27/10/1997, p.153-157Publication Analysis and modeling of a digital CMOS circuit operation and reliability after gate oxide breakdown: a case study
Journal article2002, Microelectronics Reliability, (42) 4_5, p.555-564Publication Analysis of Iddq failures through spectral photon emission microscopy
Journal article1998, Microelectronics Reliability, (38) 6_8, p.877-882Publication Analysis of Iddq failures through spectral photon emission microscopy
Proceedings paper1998, Proceedings of the 9th European Symposium on Reliability of Electron Devices and Failure Physics - ESREF, 5/10/1998, p.877-882Publication Compact and High-Performance Mode Evolution based Polarization Splitter-Rotator in Standard Active Silicon Platform
Proceedings paper2022, European Conference on Optical Communication (ECOC), SEP 18-22, 2022Publication Explanation of nMOSFET substrate current after hard gate oxide breakdown
Journal article2001, Microelectronic Engineering, (59) 1_4, p.155-160Publication High resolution stress and temperature measurements in semiconductor devices using micro-Raman spectroscopy
Proceedings paper1999, Advanced Photonic Sensors and Applications, 30/11/1999, p.239-252Publication Impact of MOSFET gate oxide breakdown on digital circuit operation and reliability
Journal article2002, IEEE Trans. Electron Devices, (49) 3, p.500-506Publication Impact of MOSFET oxide breakdown on digital circuit operation and reliability
Proceedings paper2000, IEDM Technical Digest, 10/12/2000, p.553-556Publication Impact of oxide breakdown on FET and circuit operation and reliability
Oral presentation2001, SISC-Conference; December 2001; Washington, D.C.Publication Modification and application of an emission microscope for continuous wavelength spectroscopy
Proceedings paper1997, Proceedings of 8th European Symposium on Reliability of Electron Devices, Failure Physics and Analysis - ESREF 97; October 1997., p.1595-1598Publication Modification and application of an emission microscope for continuous wavelength spectroscopy
Journal article1997, Microelectronics and Reliability, (37) 10_11, p.1595-1598Publication Non-uniform triggering of gg-n MOSt investigated by combined emission microscopy and transmission line pulsing
Proceedings paper1998, Proceedings 20th EOS/ESD Symposium, 4/10/1998, p.177-186Publication Non-uniform triggering of gg-nMOSt investigated by combined emission microscopy and transmission line pulsing
Journal article1999, Microelectronics and Reliability, (39) 11, p.1551-1561Publication Origin of substrate hole current after gate oxide breakdown
Journal article2002, Journal of Applied Physics, (91) 4, p.2155-2160Publication Photo-carrier generation as the origin of Fowler-Nordheim-induced substrate hole current in thin oxides
;Rasras, Mahmoud; ; ; ; Maes, HermanJournal article2001, IEEE Trans. Electron Devices, (48) 2, p.231-238Publication Photo-carrier generation as the origin of Fowler-Nordheim-induced substrate hole current in thin oxides
;Rasras, Mahmoud; ; ; ; Maes, HermanProceedings paper1999, International Electron Devices Meeting. Technical digest; 5-8 Dec. 1999; Washington, D.C., USA., p.465-468