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Browsing by Author "Rathsack, Benjamin"

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    Effect of PAG distribution on ArF and EUV resist performance

    Gronheid, Roel  
    ;
    Rathsack, Benjamin
    ;
    Bernard, Sophie
    ;
    Vaglio Pret, Alessandro  
    ;
    Nafus, Kathleen  
    Journal article
    2009, Journal of Photopolymer Science and Technology, (22) 1_6, p.97-104
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    EUV reolution-LWR-sensitivity performance tradeoffs for a polymer bound PAG resist

    Gronheid, Roel  
    ;
    Vaglio Pret, Alessandro  
    ;
    Rathsack, Benjamin
    ;
    Hooge, Joshua
    ;
    Scheer, Steven  
    Oral presentation
    2010, 54th International conference on Electron, Ion and Photon Beam Technology and Nanofabrication - EIPBN
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    EUV RLS performance tradeoffs for a polymer bound PAG resist

    Gronheid, Roel  
    ;
    Vaglio Pret, Alessandro  
    ;
    Rathsack, Benjamin
    ;
    Hooge, Joshua
    ;
    Scheer, Steven  
    Proceedings paper
    2010, Advances in Resist Materials and Processing Technology XXVII, 21/02/2010, p.76390M
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    Resist fundamentals for resolution, LER and sensitivity (RLS) performance tradeoffs and their relation to micro-bridging defects

    Rathsack, Benjamin
    ;
    Nafus, Kathleen  
    ;
    Hatakeyama, Shinichi
    ;
    Kuwahara, Yuhei
    ;
    Kitano, Junichi
    Proceedings paper
    2009, Advances in Resist Materials and Processing Technology XXVI, 22/02/2009, p.727347
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    Resolution-linewidth roughness-sensitivity performance tradeoffs for an extreme ultraviolet polymer bound photo-acid generator resist

    Gronheid, Roel  
    ;
    Vaglio Pret, Alessandro  
    ;
    Rathsack, Benjamin
    ;
    Hooge, Joshua
    ;
    Scheer, Steven  
    Journal article
    2011, Journal of Micro/Nanolithography MEMS and MOEMS, (10) 1, p.13017

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