imec Institutional Repository Browsing {{ collection }} by Author "Rogge, S."

Publication

Atomistic understanding of a single gated dopant atom in a MOSFET

Lansbergen, G.

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Rahman, R.

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Wellard, C.

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Caro, J.

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Collaert, Nadine

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Biesemans, Serge

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Klimeck, G.

Proceedings paper

2008, Materials and Devices for "Beyond CMOS" Scaling, 24/03/2008, p.1067-B03-07

Publication

Coherent transport through a double donor system in silicon

Verduijn, J.

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Tettamanzi, G.

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Lansbergen, G.P.

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Collaert, Nadine

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Biesemans, Serge

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Rogge, S.

Journal article

2010, Applied Physics Letters, (96) 7, p.72110

Publication

Direct observation by resonant tunneling of the B+ level in a delta-doped silicon barrier

Caro, J.

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Vink, I.D.

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Smit, G.D.J.

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Rogge, S.

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Klapwijk, T.M.

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Loo, Roger

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Caymax, Matty

Journal article

2004, Physical Review B, (69) 12, p.125324-1-125324-5

Publication

Electric field reduced charging energies and two-electron bound excited states of single donors in silicon

Rahman, R.

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Lansbergen, G.

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Verduijn, J.

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Tettamanzi, G.C.

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Park, S.H.

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Collaert, Nadine

Journal article

2011, Physical Review B, (84) 11, p.115428

Publication

Electron transport properties of single donors in nanoscale Si MOSFETs

Verduijn, J.

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Lansbergen, G.

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Tettamanzi, G.C.

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Rahman, R.

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Biesemans, Serge

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Collaert, Nadine

Proceedings paper

2009, Silicon Nanoelectronics Workshop, 13/06/2009, p.135-136

Publication

From single-atom spectroscopy to lifetime enhanced triplet transport in MOSFETs

Verduijn, J.

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Lansbergen, G.P.

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Tettamanzi, G.C.

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Rahman, R.

;

Biesemans, Serge

;

Collaert, Nadine

Proceedings paper

2009, International Conference on Solid-State Devices and Materials - SSDM, 7/10/2009, p.258-259

Publication

Gate-induced quantum- confinement transition of a single dopant atom in a silicon FinFET

Lansbergen, G.P.

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Rahman, R.

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Wellard, C.J.

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Woo, I.

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Caro, J.

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Collaert, Nadine

;

Biesemans, Serge

Journal article

2008, Nature Physics, (4) 8, p.656-661

Publication

Innovative characterization techniques for ultra-scaled FinFETs

Tettamanzi, G.C.

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Lansbergen, G.P.

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Verduijn, J.

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Rahman, R.

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Paul, A.

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Lee, S.

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Collaert, Nadine

Proceedings paper

2010, 10th IEEE International Conference on Nanotechnology and Joint Symposium with Nano Korea, 17/08/2010, p.25-30

Publication

Lifetime-enhanced transport in silicon due to spin and valley blockade

Lansbergen, G.P.

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Rahman, R.

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Verduijn, J.

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Tettamanzi, G.C.

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Collaert, Nadine

;

Biesemans, Serge

Journal article

2011, Physical Review Letters, (107) 13, p.136602

Publication

Probing the spin states of a single acceptor atom

van der Heijden, J.

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Salfi, J.

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Mol, J.A.

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Verduijn, J.

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Tettamanzi, G.C.

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Hamilton, A. R.

Journal article

2014, Nano Letters, (14) 3, p.1492-1496

Publication

Single-electron capacitance spectroscopy of individual dopants in silicon

Gasseller, M.

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DeNinno, M.

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Loo, Roger

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Harrison, J.F

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Caymax, Matty

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Rogge, S.

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Tessmer, S.H.

Journal article

2011-10, Nano Letters, (11) 12, p.5208-5212

Publication

Towards Tunneling Through a Single Dopant Atom

Caro, J.

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Smit, G.D.J.

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Sellier, H.

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Loo, Roger

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Caymax, Matty

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Rogge, S.

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Klapwijk, T.M.

Proceedings paper

2005, PHYSICS OF SEMICONDUCTORS: 27th International Conference on the Physics of Semiconductors - ICPS-27, 26/07/2004, p.1587

Publication

Transport-based dopant metrology in advanced FinFETs

Lansbergen, G.P.

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Rahman, R.

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Wellard, C.J.

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Caro, J.

;

Collaert, Nadine

;

Biesemans, Serge

Proceedings paper

2008, Technical Digest International Electron Devices Meeting - IEDM, 15/12/2008, p.713-716

Browsing by Author "Rogge, S."