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Browsing by Author "Romandic, I."

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    A comparison of intrinsic point defect properties in Si and Ge

    Vanhellemont, J.
    ;
    Spiewak, P.
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    Sueoka, K.
    ;
    Simoen, Eddy  
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    Romandic, I.
    Proceedings paper
    2008, Doping Engineering for Front-End Processing, 24/03/2008, p.1070-E6-05
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    Carrier lifetime dependence on doping, metal implants and excitation density in Ge and Si

    Gaubas, E.
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    Vanhellemont, J.
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    Simoen, Eddy  
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    Romandic, I.
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    Geens, W.
    ;
    Clauws, P.
    Journal article
    2007, Physica B: Condensed Matter, 401-402, p.222-225
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    Grown-in lattice defects and diffusion in czochralski-grown germanium

    Vanhellemont, J.
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    De Gryse, O.
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    Hens, S.
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    Vanmeerbeek, P.
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    Poelman, D.
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    Clauws, P.
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    Simoen, Eddy  
    Journal article
    2004, Defect and Diffusion Forum, 230-232, p.149-176
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    On the characterisation of grown-in defects in Czocharski-grown Si and Ge

    Vanhellemont, Jan
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    Van Steenbergen, Jan  
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    Holsteyns, Frank  
    ;
    Roussel, Philippe  
    ;
    Meuris, Marc  
    Journal article
    2008, Journal of Materials Science: Materials in Electronics, (19) Suppl.1, p.S24-S31

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