Browsing by Author "Rott, K."

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A reliable method for the extraction of the lateral position of defects in ultra-scaled MOSFETs

Illarionov, Yu. Yu.
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Bina, M.
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Tyaginov, S. E.
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Rott, K.
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Reisinger, H.
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Kaczer, Ben
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Grasser, T.
Proceedings paper
2014, International Reliability Physics Symposium - IRPS, 1/06/2014, p.XT.13
Advanced characterization of oxide traps: the dynamic time-dependent defect spectroscopy

Grasser, Tibor
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Rott, K.
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Reisinger, H.
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Wagner, P.J.
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Goes, W
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Schanovsky, F.
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Waltl, M.
Proceedings paper
2013, IEEE International Reliability Physics Symposium - IRPS, 14/04/2013, p.2D.2
Characterization and modeling of charge trapping: From single defects to devices

Grasser, T.
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Rzepa, G.
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Waltl, M.
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Goes, W.
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Rott, K.
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Rott, G.
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Reisinger, H.
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Franco, Jacopo
Proceedings paper
2014, IEEE International Conference on IC Design & Technology - ICICDT, 28/05/2014, p.1-4
Hydrogen-related volatile defects as the possible cause for the recoverable component of NBTI

Grasser, T.
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Rott, K.
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Reisinger, H.
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Waltl, M.
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Wagner, P.
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Schanovsky, F.
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Goes, W.
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Pobegen, G.
Proceedings paper
2013, International Electron Devices Meeting - IEDM, 9/12/2013, p.409-412
NBTI in nanoscale MOSFETs – The ultimate modeling menchmark

Grasser, T.
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Rott, K.
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Reisinger, H.
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Waltl, M.
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Schanovsky, F.
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Kaczer, Ben
Journal article
2014, IEEE Transactions on Electron Devices, (61) 11, p.3586-3593
Physical modeling of NBTI: from individual defects to devices

Rzepa, G.
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Goes, W.
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Rott, G.
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Rott, K.
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Karner, M.
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Kernstock, C.
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Kaczer, Ben
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Reisinger, H.
Proceedings paper
2014, International Conference on Simulation of Semiconductor Processes and Devices - SISPAD, 9/09/2014, p.81-84