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Browsing by Author "Saint-Girons, Guillaume"

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    High oxidation state at the epitaxial interface of g-Al2O3 thin films grown on Si(111) and Si(001)

    El-Kazzi, Mario
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    Merckling, Clement  
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    Saint-Girons, Guillaume
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    Grenet, Genevieve
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    Silly, M.
    Journal article
    2010, Applied Physics Letters, (97) 15, p.151902
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    Integration of Li4Ti5O12 Crystalline Films on Silicon Toward High- Rate Performance Lithionic Devices

    Lacey, Steven D.
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    Gilardi, Elisa
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    Mueller, Elisabeth
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    Merckling, Clement  
    Journal article
    2023-01, ACS APPLIED MATERIALS & INTERFACES, (15) 1, p.1535-1544
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    Molecular beam epitaxial growth of BaTiO3 single crystal on Ge-on-Si(001) substrate

    Merckling, Clement  
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    Saint-Girons, Guillaume
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    Botella, Claude
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    Hollinger, Guy
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    Heyns, Marc  
    Journal article
    2011, Applied Physics Letters, (98) 9, p.92901
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    Strategies for CMOS low equivalent oxide thickness achievement with high-k oxides grown on Si(001) by MBE

    Beccera, Loic
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    Baboux, Nicolas
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    Plossu, Carole
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    Merckling, Clement  
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    El-Kazzi, Mario
    Proceedings paper
    2008, Materials Science of High-k Dielectric Stackx - From Fundamentals to Technology, 24/03/2008, p.1073-H3-08
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    Synchrotron radiation and conventional X-ray source photoemission studies of epitaxial g-Al2O3 thin films grown on Si(111) & Si(001) substrates by molecular beam epitaxy

    El-Kazzi, Mario
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    Merckling, Clement  
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    Grenet, Genevieve
    ;
    Saint-Girons, Guillaume
    Proceedings paper
    2009, CMOS Gate-Stack Scaling - Materials, Interfaces, and Reliability Implications, 13/04/2009, p.C08-08
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    X-ray photoelectron diffraction study of thin Al2O3 films grown on Si(111) by molecular beam epitaxy

    El-Kazzi, Mario
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    Grenet, Genevieve
    ;
    Merckling, Clement  
    ;
    Saint-Girons, Guillaume
    Journal article
    2009, Physical Review B, (79) 19, p.195312

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