Browsing by Author "Sangiorgi, E"
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Publication Gate reliability of p-GaN HEMT with gate metal retraction
Journal article2019, IEEE Transactions on Electron Devices, (66) 11, p.4829-4835Publication Improving Time-Dependent Gate Breakdown of GaN HEMTs with p-type Gate
Proceedings paper2021, 2021 IEEE Latin American Electronic Devices Conference - LAEDC2021, 19/04/2021Publication Role of the AlGaN barrier on the long-term gate reliability of power HEMTs
Journal article2020, Microelectronics Reliability, 114, p.113872