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Browsing by Author "Saraswat, K. C."

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    Influence of process-induced stress on device characteristics and its impact on scaled device performance

    Smeys, Peter
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    Griffin, P. B.
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    Rek, Z. U.
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    De Wolf, Ingrid  
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    Saraswat, K. C.
    Journal article
    1999, IEEE Trans. Electron Devices, (46) 6, p.1245-1252
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    The influence of oxidation-induced stress on the generation current and its impact on scaled device performance

    Smeys, Peter
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    Griffin, P. B.
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    Rek, Z. U.
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    De Wolf, Ingrid  
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    Saraswat, K. C.
    Proceedings paper
    1996, International Electron Devices Meeting. Technical Digest - IEDM, 8/12/1996, p.709-12
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    Towards high mobility GeSn channel nMOSFETs: improved surface passivation using novel ozone oxidation method

    Gupta, Somya
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    Vincent, Benjamin  
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    Yang, B.
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    Lin, Dennis  
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    Gencarelli, Federica
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    Lin, J.-Y. J.
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    Chen, R.
    Proceedings paper
    2012, International Electron Devices Meeting - IEDM, 10/12/2012, p.16.2

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