Browsing by Author "Schenk, Tony"
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Publication Effect of annealing ferroelectric HfO2 thin films: In situ, high temperature X-ray diffraction
Journal article2018, Advanced Electronic Materials, (4) 7, p.1800091-1-1800091-10Publication Electric field cycling behavior of ferroelectric hafnium oxide
Journal article2014, ACS Applied Materials & Interfaces, (6) 22, p.19744-19751Publication Identification of the ferroelectric switching process and dopant-dependent switching properties in orthorhombic HfO2: a first principles insight
Journal article2014, Applied Physics Letters, (104) 9, p.92906Publication Impact of different dopants on the switching properties of ferroelectric hafnium oxide
;Schroeder, Uwe ;Yurchuk, Ekaterina ;Müller, Johannes ;Martin, DominikSchenk, TonyJournal article2014-07, Japanese Journal of Applied Physics, (53) 8S1, p.08LE02Publication Low temperature compatible hafnium oxide based ferroelectrics
Journal article2014, Ferroelectrics, (480) 1, p.16-23Publication Low temperature compatible hafnium oxide based ferroelectrics
Proceedings paper2014, European Conference on Application of Polar Dielectrics, 7/07/2014Publication Low temperature compatible hafnium oxide based ferroelectrics
Journal article2014, Ferroelectrics, (480) 1, p.16-23Publication Stabilizing the ferroelectric phase in doped hafnium oxide
;Hoffmann, M. ;Schroeder, Uwe ;Schenk, Tony ;Shimizu, T ;Funakubo, H. ;Sakata, O.Pohl, D.Journal article2015, Journal of Applied Physics, (118) 7, p.72006Publication Strontium doped hafnium oxide thin films: wide process window for ferroelectric memories
Proceedings paper2013, 43rd European Solid State Device Research Conference - ESSDERC, 16/09/2013, p.260-263