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Browsing by Author "Schoenmaker, Wim"

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    A comparison between various empirical models for TCAD purposes

    Govoreanu, Bogdan  
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    Suykens, J.
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    Schoenmaker, Wim
    ;
    Amza, Claudiu
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    Dima, G.
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    Vandewalle, Joseph
    Proceedings paper
    2000, Proceedings of the 23rd International Semiconductor Conference - CAS, 10/10/2000, p.315-318
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    A hybrid technique for TCAD modeling and optimization

    Govoreanu, Bogdan  
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    Kopalidis, George
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    Schoenmaker, Wim
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    Dima, G.
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    Mitrea, O.
    ;
    Profirescu, M. D.
    Proceedings paper
    1998, Simulation of Semiconductor Processes and Devices 1998 - SISPAD 98, 2/09/1998, p.73-76
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    A hybrid technique for TCAD modeling and optimization

    Govoreanu, Bogdan  
    ;
    Schoenmaker, Wim
    ;
    Kopalidis, George
    ;
    Dima, G.
    ;
    Mitrea, O.
    ;
    Profirescu, M.
    Journal article
    2000, Journal Transactions on CAD
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    A method for smooth statistical interpolation

    Schoenmaker, Wim
    Proceedings paper
    1999, Proceedings CSCS Conference; 25-29 May 1999; Bucharest, Romania., p.101
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    A new finite-element discretization technique for the hydrodynamic formulation of energy balance equations

    Vankemmel, Rudi
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    Schoenmaker, Wim
    ;
    De Meyer, Kristin  
    Journal article
    1994, COMPEL: The International Journal for Computation and Mathematics in Electrical and Electronic Engineering, (13) 3, p.531-551
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    A novel model for boron diffusion in SiGe strained layers based on a kinetic driven Ge-B pairing mechanism

    Villaneuva, D.
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    Moens, P.
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    Krishnasamy, Rajendran
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    Schoenmaker, Wim
    Proceedings paper
    2001, Proceedings of the International Conference on Simulation of Semiconductor Physics and Processes - SISPAD; 5-7 September 2001; A, p.22-25
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    A simple model and simulation of complete suppression of boron out-diffusion in Si1-xGex by carbon insertion

    Krishnasamy, Rajendran
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    Schoenmaker, Wim
    Proceedings paper
    2001, Proceedings of the International Conference on Simulation of Semiconductor Physics and Processes - SISPAD; 5-7 September 2001; A, p.66-69
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    Ab-initio calculation of substrate currents using ghost field gauging

    Meuris, Peter
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    Schoenmaker, Wim
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    Magnus, Wim  
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    Maleszka, Bert
    Oral presentation
    2002, Scientific Computing in Electrical Engineering - SCEE
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    Ab-initio electrodynamic modeling of on-chip back-end structures

    Schoenmaker, Wim
    ;
    Meuris, Peter
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    Magnus, P.
    Proceedings paper
    2001, Proceedings of the International Conference on Simulation of Semiconductor Physics and Processes - SISPAD; 5-7 September 2001; A, p.98-107
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    Balance equation approach towards quantum transport

    Soree, Bart  
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    Magnus, Wim  
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    Schoenmaker, Wim
    Meeting abstract
    2003, Annual APS March Meeting, 3/03/2003, p.98
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    Balance equation approach towards quantum transport

    Soree, Bart  
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    Magnus, Wim  
    ;
    Schoenmaker, Wim
    Oral presentation
    2003, Annual APS March Meeting
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    Conductance quantization : where is the dissipation

    Schoenmaker, Wim
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    Soree, Bart  
    ;
    Magnus, Wim  
    ;
    Van Haesendonck, Chris
    Oral presentation
    2003, Second Euroconference on Quantum Optoelectronics for Nanotechnology
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    Conductance quantization and dissipation

    Soree, Bart  
    ;
    Magnus, Wim  
    ;
    Schoenmaker, Wim
    Journal article
    2003, Physics Letters A, (310) 4, p.322-328
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    Conductance quantization: where is the dissipation?

    Schoenmaker, Wim
    ;
    Soree, Bart  
    ;
    Magnus, Wim  
    ;
    Van Haesendonck, Chris
    Oral presentation
    2003, 2nd Euroconference on Quantum Optoelectronics for Nanotechnology - EQUONT2
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    Control and readout of current-induced magnetic flux quantization in a superconducting transformer

    Kerner, Christoph  
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    Hackens, Benoit
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    Golubovic, Dusan
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    Poli, Stefano
    ;
    Faniel, Sebastien
    Journal article
    2009, Superconductor Science and Technology Journal, (22) 2, p.25001
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    Device modeling in the frame of project ADEQUAT

    Rudan, M.
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    Vecchi, M. C.
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    Von Schwerin, Andreas
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    Schoenmaker, Wim
    ;
    De Keersgieter, An  
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    McCarthy, K.
    Journal article
    1996, Microelectronic Engineering, 34, p.67-84
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    Distribution of fields and charge carriers in cylindrical and planar nanosize structures

    Pokatilov, E. P.
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    Balaban, S. N.
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    Klimin, S. N.
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    Fomin, V. M.
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    Devreese, J. T.
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    Magnus, Wim  
    Oral presentation
    1998, 1998 March Meeting of the American Physical Society; 16-20 March 1998; Los Angeles, CA, USA.
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    Distribution of fields and charge carriers in cylindrical nanosize silicon-based metal-oxide-semiconductor structures

    Pokatilov, E. P.
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    Fomin, V. M.
    ;
    Balaban, S. N.
    ;
    Gladilin, V. N.
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    Klimin, S. N.
    ;
    Devreese, J. T.
    Journal article
    1999, J. Appl. Phys., (85) 9, p.6625-6631
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    Early resistance change and stress/electromigration modeling in aluminum interconnects

    Petrescu, Violeta
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    Mouthaan, A. J.
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    Schoenmaker, Wim
    Proceedings paper
    1997, Proceedings of 8th European Symposium on Reliability of Electron Devices, Failure Physics and Analysis - ESREF 97; October 1997., p.1491-1494
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    Early resistance change and stress/electromigration modeling in aluminum interconnects

    Petrescu, Violeta
    ;
    Mouthaan, A. J.
    ;
    Schoenmaker, Wim
    Journal article
    1997, Microelectronics and Reliability, (37) 10_11, p.1491-1494
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