Browsing by Author "Sedky, Sherif"
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Publication Analysis of the structural properties of polycrystalline silicon germanium films
Proceedings paper1999, ICM'99. The eleventh international conference on microelectronics. Proceedings;, p.67-70Publication Backside thinned CMOS imagers with high broadband quantum efficiency realised using a new integration process
Journal article2008, Electronics Letters, (44) 1, p.50-51Publication Bi2Te3 as an active material for MEMS based devices fabricated at room temperature
Proceedings paper2009, Transducers. 15th International Conference on Solid-State Sensors, Actuators and Microsystems, 14/06/2009, p.1035-1038Publication Characterization and optimization of infrared SiGe bolometers
Journal article1999, IEEE Trans. Electron Devices, (46) 4, p.675-682Publication Characterization of bolometers based on polycrystalline silicon germanium alloys
Journal article1998, IEEE Electron Device Letters, (19) 10, p.376-379Publication CMOS-based sensors and actuators
Proceedings paper1998, Proceedings of the 11th Annual IEEE International ASIC Conference, 13/09/1998, p.393-397Publication CMOS-based transducers
Proceedings paper1998, Micro System Technologies 98 - 6th International Conference on Micro Electro, Opto, Mechanical Systems and Components, 1/12/1998, p.367-372Publication Contact resistivity of laser annealed SiGe for MEMS structural layers deposited at 210C
Proceedings paper2011, Micromechanical Systems - Materials and Devices IV, 29/11/2010, p.mrsf10-1299-s02-Publication Contact resistivity of laser annealed SiGe for MEMS structural layers deposited at 210C
Meeting abstract2010, MRS Fall Meeting Symposium S: Micromechanical Systems - Materials and Devices IV, 29/11/2010, p.S2.5Publication Effect of deposition and annealing temperature on the structural and mechanical properties of poly SiGe
Proceedings paper2001, Amorphous and Heterogeneous Silicon Thin Films - 2000; San Francisco, CA, USA; 24-28 April 2000., p.A8.5.1-6Publication Effect of deposition and annealing temperature on the structural and mechanical properties of poly SiGe
Oral presentation2000, MRS Spring Meeting 2000. Symposium A:Amorphous and Heterogeneous Silicon Thin Films - 2000; 24-28 April 2000; San Francisco, Ca,Publication Effect of in situ boron doping on properties of silicon germanium films deposited by chemical vapor deposition at 400 degrees C
Journal article2001, Journal of Materials Research, (16) 9, p.2607-2612Publication Electrical properties and noise of poly SiGe deposited at temperatures compatible with MEMS integration on top of standard CMOS
Sedky, SherifProceedings paper2002, BioMEMS and Bionanotechnology, 1/04/2002, p.83-88Publication Experimental determination of the maximum post-process annealing temperature for standard CMOS wafers
Journal article2001, IEEE Trans. Electron Devices, (48) 2, p.377-385Publication Harsh laser annealing techniques for improved crystallization of a-Si(Ge) layers deposited at 210C
Proceedings paper2009, Annual Workshop on Semiconductor Advances for Future Electronics - SAFE, 26/11/2009, p.63-66Publication IR bolometers made of polycrystalline silicon germanium
Journal article1998, Sensors and Actuators A, A66, p.193-199Publication IR micro bolometers, made of polycrystalline silicon germanium alloys
Proceedings paper1997, Proceedings of the 2nd Round Table of Micro-Nano Technologies for Space, 15/10/1997, p.179-186Publication Laser annealed SiGe devices for MEMS applications at temperatures below 250C
Proceedings paper2011, 16th International Conference on Solid-State Sensors, Actuators and Microsystems - TRANSDUCERS, 5/06/2011, p.1336-1339Publication Laser-induced crystallization of SiGe MEMS structural layers deposited at temperatures below 250C
Proceedings paper2009, Amorphous and Polycrystalline Thin-Film Silicon Science and Technology, 13/04/2009, p.1153-A19-03Publication Linear arrays of uncooled poly SiGe microbolometers for IR detection
Proceedings paper1999, Micromachined Devices and Components V, 20/09/1999, p.256-259
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