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Browsing by Author "Shimamoto, Y."

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    High-k gate stack engineering – towards meeting low standby power and high performance targets

    De Gendt, Stefan  
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    Brunco, David
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    Caymax, Matty  
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    Conard, Thierry  
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    Date, Lucien  
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    Delabie, Annelies  
    Proceedings paper
    2005, Advanced Gate Stack, Source/Drain, and Channel Engineering for Si-Based CMOS: New Materials, Processes, and Equipment, 15/05/2005, p.109-117
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    High-k materials for advanced gate stack dielectrics: a comparison of ALCVD and MOCVD as deposition technologies

    Caymax, Matty  
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    Bender, Hugo  
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    Brijs, Bert
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    Conard, Thierry  
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    De Gendt, Stefan  
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    Delabie, Annelies  
    Proceedings paper
    2003, CMOS Front-End Materials and Process Technology, 21/04/2003, p.47-58
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    Potential remedies for the VT/Vfb-shift problem of Hf/polysilicon-based gate stacks: a solution-based survey

    Deweerd, Wim
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    Kaushik, Vidya
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    Chen, J.
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    Shimamoto, Y.
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    Schram, Tom  
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    Ragnarsson, Lars-Ake  
    Journal article
    2005-01, Microelectronics Reliability, (45) 5_6, p.786-789
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    Potential remedies for the VT/Vfb-shift problem of Hf/polysilicon-based gate stacks: a solution-based survey

    Deweerd, Wim
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    Kaushik, Vidya
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    Chen, J.
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    Shimamoto, Y.
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    Ragnarsson, Lars-Ake  
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    Delabie, Annelies  
    Proceedings paper
    2004, 13th Workshop on Dielectrics in Microelectronics - WODIM, 28/06/2004
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    Scaling of Hf-based high-k dielectrics

    Heyns, Marc  
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    Beckx, Stephan  
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    Caymax, Matty  
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    Chen, J.
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    Claes, Martine  
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    Coenegrachts, Bart  
    Meeting abstract
    2004, International Workshop on Dielectric Thin Films for Future ULSI Devices, 26/05/2004, p.5-6

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