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Browsing by Author "Skorupa, W."

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    Millisecond flash lamp annealing of shallow implanted layers in Ge

    Wündisch, C.
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    Posselt, M.
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    Schmidt, B.
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    Heera, V.
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    Schumann, T.
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    Mücklich, A.
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    Grötzschel, R.
    Journal article
    2009, Applied Physics Letters, (95) 25, p.252107
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    Millisecond flash lamp annealing of ultrashallow implanted layers in Ge

    Posselt, M.
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    Wündisch, C.
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    Schmidt, B.
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    Schumann, T.
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    Mücklich, A.
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    Skorupa, W.
    ;
    Clarysse, Trudo
    Meeting abstract
    2009, 216th ECS Meeting, 4/10/2009, p.2391
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    n+ doping of Ge by P or As implantation and flash-lamp annealing

    Wündisch, C.
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    Posselt, M.
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    Anwand, W.
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    Schmidt, B.
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    Grötzschel, R.
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    Mücklich, A.
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    Skorupa, W.
    Meeting abstract
    2008, E-MRS Spring Meeting Symposium I: Front-End Junction and Contact Formation in Future Silicon/Germanium Based Devices, 26/05/2008
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    Proton irradiation effects in silicon devices

    Simoen, Eddy  
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    Vanhellemont, Jan
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    Alaerts, André
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    Claeys, Cor
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    Gaubas, Eugenijus
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    Kaniava, Arvydas
    Proceedings paper
    1997, Recent Progress in Accelerator Beam Application. Proceedings 7th International Symposium on Advanced Nuclear Energy Research, 18/03/1996, p.224-229
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    Proton irradiation effects in silicon junction diodes and charge-coupled devices

    Simoen, Eddy  
    ;
    Vanhellemont, Jan
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    Alaerts, André
    ;
    Claeys, Cor
    ;
    Gaubas, Eugenijus
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    Kaniava, Arvydas
    Journal article
    1997, Radiation Physics and Chemistry, (50) 5, p.417-422
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    RTA and FLA of Ultra-shallow implanted layers in Ge

    Wündisch, C.
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    Posselt, M.
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    Anwand, W.
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    Schmidt, B.
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    Mücklich, A.
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    Skorupa, W.
    ;
    Clarysse, Trudo
    Proceedings paper
    2008, 16th IEEE International Conference on Advanced Thermal Processing of Semiconductors - RTP, 30/09/2008, p.245-249

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