Browsing by Author "Smeys, Peter"
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Publication Influence of process-induced stress on device characteristics and its impact on scaled device performance
Journal article1999, IEEE Trans. Electron Devices, (46) 6, p.1245-1252Publication Low-frequency noise and DC characterization of ionization damage in a 1-µm SOI CMOS technology adapted for space applications
; ; Publication The influence of oxidation-induced stress on the generation current and its impact on scaled device performance
Proceedings paper1996, International Electron Devices Meeting. Technical Digest - IEDM, 8/12/1996, p.709-12Publication The low-frequency noise overshoot in partially depleted N-channel silicon-on-insulator TWIN MOSTs
Journal article1994, IEEE Transactions on Electron Devices, 41, p.1972-1976Publication Transmission electron diffraction techniques for nm scale strain measurement in semiconductors
Publication Transmission electron diffraction techniques for nm scale strain measurements in semiconductors