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Browsing by Author "Stesmans, A."

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    Atomic Hydrogen Exposure to Enable High-Quality Low-Temperature SiO2 with Excellent pMOS NBTI Reliability Compatible with 3D Sequential Tier Stacking

    Franco, Jacopo  
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    de Marneffe, Jean-Francois  
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    Vandooren, Anne  
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    Kimura, Yosuke  
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    Nyns, Laura  
    Proceedings paper
    2020, IEEE International Electron Devices Meeting (IEDM), DEC 12-18, 2020
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    Electronic structure of NiO layers grown on Al2O3 and SiO2 using metallo-organic chemical vapour deposition

    Chou, H. Y.
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    Badylevich, M.
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    Afanas'ev, V. V.
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    Houssa, M.
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    Stesmans, A.
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    Meersschaut, Johan  
    Journal article
    2011-12, Journal of Applied Physics, (110) 11, p.113724
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    Ge deep sub-micron pFETs with etched TaN metal gate on a High-K dielectric, fabricated in a 200mm silicon prototyping line

    De Jaeger, Brice  
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    Houssa, Michel  
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    Satta, Alessandra
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    Kubicek, Stefan  
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    Verheyen, Peter  
    Proceedings paper
    2004, Proceedings of the 34th European Solid-State Device Research Conference - ESSDERC, 21/09/2004, p.189-192
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    Internal photoemission of electrons from 2D semiconductor/3D metal barrier structures

    Shlyakhov, I
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    Achra, Swati  
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    Bosman, N.
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    Asselberghs, Inge  
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    Huyghebaert, Cedric  
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    Radu, Iuliana  
    Journal article
    2021, JOURNAL OF PHYSICS D-APPLIED PHYSICS, (54) 29, p.295101
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    Investigation of Paramagnetic Defects in SiCN and SiCO-based Wafer Bonding

    Peng, Lan  
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    Kim, Soon-Wook  
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    Iacovo, Serena  
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    De Vos, Joeri  
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    Schoenaers, B.
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    Stesmans, A.
    Proceedings paper
    2020, 22nd IEEE Electronics Packaging Technology Conference (EPTC), DEC 02-29, 2020, p.464-467
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    Measurement of direct and indirect bandgaps in synthetic ultrathin MoS2 and WS2 films from photoconductivity spectra

    Shlyakhov, Ilya  
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    Iakoubovskii, K.
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    Banerjee, Sreetama
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    Gaur, Abhinav  
    ;
    Lin, Dennis  
    Journal article
    2021, JOURNAL OF APPLIED PHYSICS, (129) 15, p.155302

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