Browsing by Author "Sturtevant, John L."
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Publication Contour-based self-aligning calibration of OPC models
Proceedings paper2010, Metrology, Inspection and Process Control for Microlithography XXIV, 21/02/2010, p.76382MPublication High accuracy OPC-modeling by using advanced CD-SEM based contours in the next generation lithography
;Hibino, Daisuke ;Shindo, Hiroyuki ;Abe, Yuuichi ;Hojyo, Yutaka ;Fenger, GermainDo, ThuyProceedings paper2010, Metrology, Inspection and Process Control for Microlithography XXIV, 21/02/2010, p.76381XPublication High-accuracy optical proximity correction modeling using advanced critical dimension scanning electron microscope-based contours in next-generation lithography
;Hibino, Daisuke ;Shindo, Hiroyuki ;Abe, Yuichi ;Hojyo, Yutaka ;Fenger, GermainDo, ThuyJournal article2011-02, Journal of Micro/Nanolithography MEMS and MOEMS, (10) 1, p.13012Publication Impact of illumination source symmetrization in OPC
;Sturtevant, John L. ;Hong, Le ;Jayaram, Srividya ;Renwick, Stephen P.McCallum, MartinProceedings paper2008, Photomask and Next-Generation Lithography Mask Technology XV, 16/04/2008, p.70283M