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High-accuracy optical proximity correction modeling using advanced critical dimension scanning electron microscope-based contours in next-generation lithography
Publication:
High-accuracy optical proximity correction modeling using advanced critical dimension scanning electron microscope-based contours in next-generation lithography
Date
2011-02
Journal article
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Basic data
APA
Chicago
Harvard
IEEE
Basic data
APA
Chicago
Harvard
IEEE
Author(s)
Hibino, Daisuke
;
Shindo, Hiroyuki
;
Abe, Yuichi
;
Hojyo, Yutaka
;
Fenger, Germain
;
Do, Thuy
;
Kusnadi, Ir
;
Sturtevant, John L.
;
Van de Kerkhove, Jeroen
;
De Bisschop, Peter
Journal
Journal of Micro/Nanolithography MEMS and MOEMS
Abstract
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1940
since deposited on 2021-10-19
Acq. date: 2025-10-24
Citations
Metrics
Views
1940
since deposited on 2021-10-19
Acq. date: 2025-10-24
Citations