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High-accuracy optical proximity correction modeling using advanced critical dimension scanning electron microscope-based contours in next-generation lithography

Date

2011-02
Journal article
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dc.contributor.authorHibino, Daisuke
dc.contributor.authorShindo, Hiroyuki
dc.contributor.authorAbe, Yuichi
dc.contributor.authorHojyo, Yutaka
dc.contributor.authorFenger, Germain
dc.contributor.authorDo, Thuy
dc.contributor.authorKusnadi, Ir
dc.contributor.authorSturtevant, John L.
dc.contributor.authorVan de Kerkhove, Jeroen
dc.contributor.authorDe Bisschop, Peter
dc.contributor.imecauthorVan de Kerkhove, Jeroen
dc.contributor.imecauthorDe Bisschop, Peter
dc.date.accessioned2021-10-19T14:19:19Z
dc.date.available2021-10-19T14:19:19Z
dc.date.embargo9999-12-31
dc.date.issued2011-02
dc.identifier.issn1537-1646
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/19077
dc.source.beginpage13012
dc.source.issue1
dc.source.journalJournal of Micro/Nanolithography MEMS and MOEMS
dc.source.volume10
dc.title

High-accuracy optical proximity correction modeling using advanced critical dimension scanning electron microscope-based contours in next-generation lithography

dc.typeJournal article
dspace.entity.typePublication
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