imec Institutional Repository Browsing {{ collection }} by Author "Thrush, E. J."

Publication

Chemical mapping of InGaN MQWs

Sharma, N.

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Tricker, D.

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Thomas, P.

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Bougrioua, Zahia

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Jacobs, Koen

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Cheyns, Jan

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Moerman, Ingrid

Journal article

2001, Journal of Crystal Growth, (230) 3_4, p.438-441

Publication

Detection of localised variation in the electronic properties of GaN grown by MOCVD and MBE using scanning tunneling microscopy

Hamilton, B.

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Ferhah, K.

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Davidson, J.

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Dawson, P.

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Whittaker, E.

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Cheng, T. S.

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Foxon, C. T.

Meeting abstract

1999, 3rd International Conference on Nitride Semiconductors - ICS3, 04/07/1999, p.131

Publication

Effects of carrier gas on the properties of InGaN/GaN quantum well structures grown by MOCVD

Duxbury, N.

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Dawson, P.

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Bangert, U.

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Thrush, E. J.

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Van der Stricht, Wim

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Jacobs, Koen

Journal article

1999, Physica Status Solidi B, (216) 1, p.355-359

Publication

Effects of carrier gas type on the properties of InGaN/GaN quantum well structures by MOCVD

Duxbury, N.

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Dawson, P.

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Bangert, U.

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Thrush, E. J.

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Van der Stricht, Wim

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Jacobs, Koen

Meeting abstract

1999, 3rd International Conference on Nitride Semiconductors - ICNS3, 04/07/1999, p.130

Publication

Electrical characteristics of n-type GaN grown by LP-MOVPE

Bougrioua, Zahia

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Farvacque, J. L.

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Moerman, Ingrid

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Thrush, E. J.

Oral presentation

1999, 1st Arab Congress on Materials Science - ACMS-1

Publication

Epitaxial lateral overgrowth of GaN by OMVPE

Jacobs, Koen

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Van der Stricht, Wim

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Moerman, Ingrid

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Demeester, Piet

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Verstuyft, Steven

Proceedings paper

1998, Proceedings 3rd Annual Symposium of the IEEE/LEOS Benelux Chapter, 26/11/1998, p.149-152

Publication

Epitaxial laterial overgrowth of GaN by OMVPE

Jacobs, Koen

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Van der Stricht, Wim

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Moerman, Ingrid

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Demeester, Piet

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Verstuyft, Steven

Proceedings paper

1998, URSI Forum '98, 10/12/1998, p.32

Publication

GaN based device structures grown in a close coupled showerhead MOCVD reactor

Thrush, E. J.

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Kappers, M. J.

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Bougrioua, Zahia

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Davies, R. A.

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Wallis, R. H.

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Phillips, W. A.

Oral presentation

2001, National Chinese MOCVD Conferenc; October 2001;

Publication

GaN pendeo-epitaxy

Jacobs, Koen

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Cheyns, Jan

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Moerman, Ingrid

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Demeester, Piet

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Thrush, E. J.

Proceedings paper

1999, Proceedings of the 4th Annual Symposium IEEE/LEOS Benelux Chapter, 15/11/1999, p.89-92

Publication

Getter stabilized zeolite materials for specialty GAS purification

Vergani, G.

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Succi, M.

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Thrush, E. J.

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Crawley, J. A.

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Van der Stricht, Wim

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Torres, P.

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Kroll, U.

Proceedings paper

1997, Proceedings of the 43rd Annual Technical Meeting; 4-8 May 1997. Los Angeles, Calif., USA., p.262-272

Publication

Growth and characterisation of GaN and InGaN by metalorganic chemical vapour deposition for blue light emitting devices

Van der Stricht, Wim

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Moerman, Ingrid

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Demeester, Piet

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Crawley, J. A.

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Thrush, E. J.

Proceedings paper

1996, Proceedings 1996 IEEE/LEOS Symposium. Annual Symposium of the IEEE/LEOS Benelux Chapter, 28/11/1996, p.50-53

Publication

Growth and in situ monitoring of GaN using IR interference effects

Considine, L.

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Thrush, E. J.

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Crawley, J. A.

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Jacobs, Koen

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Van der Stricht, Wim

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Moerman, Ingrid

Journal article

1998, Journal of Crystal Growth, (195) 1_4, p.192-198

Publication

High indium content InGaN films and quantum wells

Van der Stricht, Wim

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Jacobs, Koen

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Moerman, Ingrid

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Demeester, Piet

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Considine, L.

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Thrush, E. J.

Proceedings paper

1998, Nitride Semiconductors, 1/12/1997, p.107-112

Publication

Highly uniform AlAs/GaAs, InGa(Al)P/GaAs and InGaAs(P)/InP structures grown in a three 2'' wafer close-spaced vertical rotating disk reactor

Vanhollebeke, Koen

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Considine, L.

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Moerman, Ingrid

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Demeester, Piet

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Thrush, E. J.

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Crawley, J. A.

Journal article

1998, Journal of Crystal Growth, (195) 1_4, p.644-647

Publication

Highly uniform AlGaAs/GaAs and InGaAs(P)/InP structures grown in a multiwafer vertical rotating susceptor MOVPE reactor

Zhang, X.

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Moerman, Ingrid

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Sys, Carl

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Demeester, Piet

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Crawley, J. A.

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Thrush, E. J.

Journal article

1997, Journal of Crystal Growth, 170, p.83-87

Publication

Highly uniform AlGaAs/GaAs and InGaAs(P)/InP structures grown in a novel 3x2'' vertical rotating disc MOVPE-reactor

Zhang, X.

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Moerman, Ingrid

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Sys, Carl

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Demeester, Piet

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Crawley, J. A.

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Thrush, E. J.

Oral presentation

1996, Proceedings of the 8th International Conference on Metal Organic Vapour Phase Epitaxy; 9-13 June 1996; Cardiff, Wales.

Publication

Indium segregation in InGaN quantum-well structures

Duxbury, N.

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Bangert, U.

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Dawson, P.

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Thrush, E. J.

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Van der Stricht, Wim

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Jacobs, Koen

Journal article

2000, Applied Physics Letters, (76) 12, p.1600-1602

Publication

Influence of growth temperature on electrical characteristics of silicon doped GaAn grown by LP-MOVPE

Bougrioua, Zahia

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Moerman, Ingrid

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Demeester, Piet

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Thrush, E. J.

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Guyaux, J. L.

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Garcia, J. C.

Proceedings paper

1999, Proceedings of the 8th European Workshop on MOVPE, 08/06/1999, p.61-63

Publication

InGaN/GaN MQW blue light emitting diodes grown by OMVPE

Van der Stricht, Wim

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Jacobs, Koen

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Caekebeke, Kristien

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Verstuyft, S.

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Moerman, Ingrid

Proceedings paper

1998, Proceedings 3rd Annual Symposium of the IEEE/LEOS Benelux Chapter, 26/11/1998, p.237-240

Publication

Interpretation of temperature-dependent transport properties of GaN/sapphire films grown by MBE and LP-MOCVD

Harris, J. J.

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Lee, K. J.

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Harrison, I.

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Flannery, L. B.

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Korakakis, D.

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Cheng, T.

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Foxon, C. T.

Meeting abstract

1999, 3rd International Conference on Nitride Semiconductors - ICNS3, 04/07/1999, p.126

Browsing by Author "Thrush, E. J."