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Browsing by Author "Tio Castro, David"

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    Degradation of the reset switching during endurance testing of a phase-change line cell

    Goux, Ludovic  
    ;
    Tio Castro, David
    ;
    Hurkx, Fred
    ;
    Lisoni, Judit
    ;
    Delhougne, Romain  
    Journal article
    2009, IEEE Transactions on Electron Devices, (56) 2, p.354-358
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    Electromigration study of sub-100nm Cu-lines

    Michelon, Julien
    ;
    Bruynseraede, Christophe
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    Tio Castro, David
    ;
    Roussel, Philippe  
    Proceedings paper
    2005, Advanced Metallization Conference 2004 - AMC, p.2532-257
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    Evidence of the prominent role of the time-under-melt parameter in the reset switching of phase-change line cells

    Goux, Ludovic  
    ;
    Gille, Thomas
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    Tio Castro, David
    ;
    Hurkx, Fred
    ;
    Lisoni, Judit
    ;
    Delhougne, Romain  
    Proceedings paper
    2008, Non-Volatile Semiconductor Memory Workshop and International Conference on Memory Technology and Design - NVSMW/ICMTD, 18/05/2008, p.37-38
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    Evidence of the thermo-electric Thomson effect and influence on the program conditions and cell optimization in phase-change memory cells

    Tio Castro, David
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    Goux, Ludovic  
    ;
    Hurkx, G.A.M.
    ;
    Attenborough, Karen
    ;
    Delhougne, Romain  
    Proceedings paper
    2007, Technical Digest International Electron Devices Meeting - IEDM, 10/12/2007, p.315-318
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    Transient characteristics of the reset programming of a phase-change line cell and the effect of the reset parameters on the obtained state

    Goux, Ludovic  
    ;
    Gille, Thomas
    ;
    Tio Castro, David
    ;
    Hurkx, Fred
    ;
    Lisoni, Judit
    ;
    Delhougne, Romain  
    Journal article
    2009, IEEE Transactions on Electron Devices, (56) 7, p.1499-1506
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    Void growth modeling upon electromigration stressing in single damascene cu lines

    Tio Castro, David
    ;
    Hoofman, Romano  
    ;
    Michelon, Julien
    ;
    Bruynseraede, Christophe
    Journal article
    2007, Journal of Applied Physics, (102) 12, p.123515

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